Compact-device model development for the energy-delay analysis of magneto-electric magnetic tunnel junction structures

We discuss the application of a novel class of device, the magneto-electric magnetic tunnel junction (ME-MTJ) to realize a variety of computational functions, including majority logic and the XNOR/XOR gate. We also develop a compact model to describe the operation of these devices, which function by utilizing the phenomenon of 'voltage-controlled magnetism' to switch the operational state of MTJs. The model breaks down the switching process into three key stages of operation: electrical-to-magnetic conversion, magnetization transfer, and final-state readout. Estimates for the switching energy and delay of these devices, obtained from this compact model, reveal significant improvements in both of these parameters when compared to conventional MTJs switched by spin-transfer-torque. In fact, the capacity to use the ME-MTJ to implement complex logical operations within a single device allows its energy costs to even approach those of low-power CMOS. The added benefits of non-volatility and compact circuit footprint, combined with their potential for heterogeneous integration with CMOS, make the ME devices of considerable interest for post-CMOS technology.