Abstract
We study electronic transitions between a subband and a lower subband doublet which is driven by a coherent microwave (MW) field in a semiconductor double well structure. Within a microscopic three-band model, we show that variation of the MW phase allows manipulation of the optical gain provided the probe pulse duration is shorter than the period of the MW-field-generated interband polarization in the doublet. Moreover, we find that optical gain without inversion can be achieved in spite of subpicosecond dissipative mechanisms provided by electron-phonon coupling and electron tunneling into and out of the double well.
| Original language | English |
|---|---|
| Pages (from-to) | 876-878 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 73 |
| Issue number | 7 |
| DOIs | |
| State | Published - 1998 |
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