Abstract
A study was performed on classical and quantum transport in Pt nanointerconnects. Pt nanointerconnects were formed on SiO2 substrates by focused-ion-beam-deposition. A small residual-resistivity ratio and a Debye temperature that differed significantly from that of pure Pt was revealed by the studies of their temperature-dependent resistivity.
| Original language | English |
|---|---|
| Pages (from-to) | 802-804 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 82 |
| Issue number | 5 |
| DOIs | |
| State | Published - Feb 3 2003 |
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