Chemical doping and electron-hole conduction asymmetry in graphene devices

Damon B. Farmer; Golizadeh Mojarad Roksana; Vasili Perebeinos; Yu Ming Lin; George S. Tuievski; James C. Tsang; Phaedon Avouris

doi:10.1021/nl803214a

Chemical doping and electron-hole conduction asymmetry in graphene devices

Damon B. Farmer
, Golizadeh Mojarad Roksana
, Vasili Perebeinos
, Yu Ming Lin
, George S. Tuievski
, James C. Tsang
, Phaedon Avouris

Department of Electrical Engineering

IBM
Purdue University

Research output: Contribution to journal › Article › peer-review

492 Scopus citations

Abstract

We investigate poly(ethylene imine) and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.

Original language	English
Pages (from-to)	388-392
Number of pages	5
Journal	Nano Letters
Volume	9
Issue number	1
DOIs	https://doi.org/10.1021/nl803214a
State	Published - Jan 2009

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abstract = "We investigate poly(ethylene imine) and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.",

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AU - Tuievski, George S.

AU - Tsang, James C.

AU - Avouris, Phaedon

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AB - We investigate poly(ethylene imine) and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.

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Chemical doping and electron-hole conduction asymmetry in graphene devices

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