Charge redistribution in adaptable quantum-dot and quantum-well nanomaterials for infrared sensing

V. Mitin; Jae Kyu Choi; G. Thomain; K. Sablon; S. Oktyabrsky; N. Vagidov; A. Sergeev

doi:10.1117/12.2015830

Charge redistribution in adaptable quantum-dot and quantum-well nanomaterials for infrared sensing

V. Mitin
, Jae Kyu Choi
, G. Thomain
, K. Sablon
, S. Oktyabrsky
, N. Vagidov
, A. Sergeev

Department of Electrical Engineering

SUNY Buffalo
U.S. Army Research Laboratory
SUNY Albany
Optoelectronic Nanodevices LLC

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Optoelectronic materials for advanced IR sensing should combine wide strong electron coupling to the IR radiation, spectral tunability, adjustable dynamic range, manageable trade-off parameters, such as the noise characteristics and the operating time. Modern nanomaterials based on quantum dots and quantum wells provide wide possibilities to manage photoelectron processes via tuning the charge of quantum dots and quantum wells by the electric field and/or optical pumping. Variations in charge built in dots and wells change spectral characteristics, photocarrier lifetimes, and noise processes. These effects are especially strong in nanomaterials with strong selective doping of dots and wells. Manageable built-in charge provides wide possibilities to control the spectra, detector responsivity, and recombination processes.

Original language	English
Article number	87250D
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8725
DOIs	https://doi.org/10.1117/12.2015830
State	Published - 2013
Event	2013 Micro- and Nanotechnology Sensors, Systems, and Applications V Conference - Baltimore, MD, United States Duration: Apr 29 2013 → May 3 2013

Keywords

Built-in charge
Doping
Potential barriers
Quantum dots
Quantum wells

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10.1117/12.2015830

Cite this

@article{837e5172337c417e87f4971f820b5994,

title = "Charge redistribution in adaptable quantum-dot and quantum-well nanomaterials for infrared sensing",

abstract = "Optoelectronic materials for advanced IR sensing should combine wide strong electron coupling to the IR radiation, spectral tunability, adjustable dynamic range, manageable trade-off parameters, such as the noise characteristics and the operating time. Modern nanomaterials based on quantum dots and quantum wells provide wide possibilities to manage photoelectron processes via tuning the charge of quantum dots and quantum wells by the electric field and/or optical pumping. Variations in charge built in dots and wells change spectral characteristics, photocarrier lifetimes, and noise processes. These effects are especially strong in nanomaterials with strong selective doping of dots and wells. Manageable built-in charge provides wide possibilities to control the spectra, detector responsivity, and recombination processes.",

keywords = "Built-in charge, Doping, Potential barriers, Quantum dots, Quantum wells",

author = "V. Mitin and Choi, \{Jae Kyu\} and G. Thomain and K. Sablon and S. Oktyabrsky and N. Vagidov and A. Sergeev",

year = "2013",

doi = "10.1117/12.2015830",

language = "English",

volume = "8725",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "2013 Micro- and Nanotechnology Sensors, Systems, and Applications V Conference ; Conference date: 29-04-2013 Through 03-05-2013",

}

TY - JOUR

T1 - Charge redistribution in adaptable quantum-dot and quantum-well nanomaterials for infrared sensing

AU - Mitin, V.

AU - Choi, Jae Kyu

AU - Thomain, G.

AU - Sablon, K.

AU - Oktyabrsky, S.

AU - Vagidov, N.

AU - Sergeev, A.

PY - 2013

Y1 - 2013

N2 - Optoelectronic materials for advanced IR sensing should combine wide strong electron coupling to the IR radiation, spectral tunability, adjustable dynamic range, manageable trade-off parameters, such as the noise characteristics and the operating time. Modern nanomaterials based on quantum dots and quantum wells provide wide possibilities to manage photoelectron processes via tuning the charge of quantum dots and quantum wells by the electric field and/or optical pumping. Variations in charge built in dots and wells change spectral characteristics, photocarrier lifetimes, and noise processes. These effects are especially strong in nanomaterials with strong selective doping of dots and wells. Manageable built-in charge provides wide possibilities to control the spectra, detector responsivity, and recombination processes.

AB - Optoelectronic materials for advanced IR sensing should combine wide strong electron coupling to the IR radiation, spectral tunability, adjustable dynamic range, manageable trade-off parameters, such as the noise characteristics and the operating time. Modern nanomaterials based on quantum dots and quantum wells provide wide possibilities to manage photoelectron processes via tuning the charge of quantum dots and quantum wells by the electric field and/or optical pumping. Variations in charge built in dots and wells change spectral characteristics, photocarrier lifetimes, and noise processes. These effects are especially strong in nanomaterials with strong selective doping of dots and wells. Manageable built-in charge provides wide possibilities to control the spectra, detector responsivity, and recombination processes.

KW - Built-in charge

KW - Doping

KW - Potential barriers

KW - Quantum dots

KW - Quantum wells

UR - https://www.scopus.com/pages/publications/84881146506

U2 - 10.1117/12.2015830

DO - 10.1117/12.2015830

M3 - Conference article

AN - SCOPUS:84881146506

SN - 0277-786X

VL - 8725

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 87250D

T2 - 2013 Micro- and Nanotechnology Sensors, Systems, and Applications V Conference

Y2 - 29 April 2013 through 3 May 2013

ER -

Charge redistribution in adaptable quantum-dot and quantum-well nanomaterials for infrared sensing

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Keywords

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