Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

Haoran Li; Baishakhi Mazumder; Bastien Bonef; Stacia Keller; Steven Wienecke; James S. Speck; Steven P. Denbaars; Umesh K. Mishra

doi:10.1088/1361-6641/aa8b30

Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

Haoran Li
, Baishakhi Mazumder
, Bastien Bonef
, Stacia Keller
, Steven Wienecke
, James S. Speck
, Steven P. Denbaars
, Umesh K. Mishra

Department of Materials Design and Innovation

University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al _x Ga_1-xN) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

Original language	English
Article number	115004
Journal	Semiconductor Science and Technology
Volume	32
Issue number	11
DOIs	https://doi.org/10.1088/1361-6641/aa8b30
State	Published - Sep 29 2017

Keywords

AlGaN
AlN
atom probe tomography
GaN
metal-organic chemical vapor deposition
N face
N polar

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10.1088/1361-6641/aa8b30

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@article{3ff1debbf09243bdb9bdb10bde84fcd5,

title = "Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition",

abstract = "In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-xN) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95\% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.",

keywords = "AlGaN, AlN, atom probe tomography, GaN, metal-organic chemical vapor deposition, N face, N polar",

author = "Haoran Li and Baishakhi Mazumder and Bastien Bonef and Stacia Keller and Steven Wienecke and Speck, \{James S.\} and Denbaars, \{Steven P.\} and Mishra, \{Umesh K.\}",

note = "Publisher Copyright: {\textcopyright} 2017 IOP Publishing Ltd.",

year = "2017",

month = sep,

day = "29",

doi = "10.1088/1361-6641/aa8b30",

language = "English",

volume = "32",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "11",

}

TY - JOUR

T1 - Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

AU - Li, Haoran

AU - Mazumder, Baishakhi

AU - Bonef, Bastien

AU - Keller, Stacia

AU - Wienecke, Steven

AU - Speck, James S.

AU - Denbaars, Steven P.

AU - Mishra, Umesh K.

PY - 2017/9/29

Y1 - 2017/9/29

N2 - In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-xN) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

AB - In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-xN) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

KW - AlGaN

KW - AlN

KW - atom probe tomography

KW - GaN

KW - metal-organic chemical vapor deposition

KW - N face

KW - N polar

UR - https://www.scopus.com/pages/publications/85032748397

U2 - 10.1088/1361-6641/aa8b30

DO - 10.1088/1361-6641/aa8b30

M3 - Article

AN - SCOPUS:85032748397

SN - 0268-1242

VL - 32

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

M1 - 115004

ER -

Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

Abstract

Keywords

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