Characterization of heteroepitaxial InSb films on GaAs prepared by metalorganic magnetron sputtering

Heteroepitaxial films of InSb on GaAs(100) have been grown by metalorganic magnetron sputtering. Cross-sectional transmission electron microscopy studies indicate that twins are the dominant defects occuring at the InSb-GaAs interface. X-ray diffraction measurements on films of different thicknesses, as well as large area electron channeling measurements, have shown that the density of twins decreases with distance away from the interface and appears to approach an equilibrium value for thicknesses greater than 3 μm.