Characterization of Ba0.5Sr0.5TiO3Thin Film Capacitors Produced by Pulsed Laser Deposition

Q. X. Jia; X. D. Wu; S. R. Foltyn; P. Tiwart

doi:10.1080/10584589508012265

Characterization of Ba_0.5Sr_0.5TiO₃Thin Film Capacitors Produced by Pulsed Laser Deposition

Q. X. Jia
, X. D. Wu
, S. R. Foltyn
, P. Tiwart

Department of Materials Design and Innovation

Superconductivity Technology Center
Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

High crystallinity Ba_0.5Sr_0.5TiO₃ thin films were deposited on LaAlO₃ substrates by pulsed laser deposition. A conductive metallic oxide, SrRuO₃, provided not only a good bottom electrode for Ba_0.5Sr_0.5TiO₃ but also an excellent seed layer for epitaxial growth of Ba_0.5Sr_0.5TiO₃ on it. The epitaxial nature of the Ba_0.5Sr_0.5TiO₃ thin films on the LaA1O₃ substrate was confirmed by x-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy. The quite good dielectric and electrical properties of crystalline Ba_0.5Sr_0.5TiO₃ thin films suggest that Ba_0.5Sr_0.5TiO₃/SrRuO₃ is a good combination in terms of structural, electrical, and dielectric properties of Ba_0.5Sr_0.5TiO₃ thin films.

Original language	English
Pages (from-to)	73-79
Number of pages	7
Journal	Integrated Ferroelectrics
Volume	10
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589508012265
State	Published - Oct 1 1995

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10.1080/10584589508012265

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title = "Characterization of Ba0.5Sr0.5TiO3Thin Film Capacitors Produced by Pulsed Laser Deposition",

abstract = "High crystallinity Ba0.5Sr0.5TiO3 thin films were deposited on LaAlO3 substrates by pulsed laser deposition. A conductive metallic oxide, SrRuO3, provided not only a good bottom electrode for Ba0.5Sr0.5TiO3 but also an excellent seed layer for epitaxial growth of Ba0.5Sr0.5TiO3 on it. The epitaxial nature of the Ba0.5Sr0.5TiO3 thin films on the LaA1O3 substrate was confirmed by x-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy. The quite good dielectric and electrical properties of crystalline Ba0.5Sr0.5TiO3 thin films suggest that Ba0.5Sr0.5TiO3/SrRuO3 is a good combination in terms of structural, electrical, and dielectric properties of Ba0.5Sr0.5TiO3 thin films.",

author = "Jia, \{Q. X.\} and Wu, \{X. D.\} and Foltyn, \{S. R.\} and P. Tiwart",

year = "1995",

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doi = "10.1080/10584589508012265",

language = "English",

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journal = "Integrated Ferroelectrics",

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TY - JOUR

T1 - Characterization of Ba0.5Sr0.5TiO3Thin Film Capacitors Produced by Pulsed Laser Deposition

AU - Jia, Q. X.

AU - Wu, X. D.

AU - Foltyn, S. R.

AU - Tiwart, P.

PY - 1995/10/1

Y1 - 1995/10/1

N2 - High crystallinity Ba0.5Sr0.5TiO3 thin films were deposited on LaAlO3 substrates by pulsed laser deposition. A conductive metallic oxide, SrRuO3, provided not only a good bottom electrode for Ba0.5Sr0.5TiO3 but also an excellent seed layer for epitaxial growth of Ba0.5Sr0.5TiO3 on it. The epitaxial nature of the Ba0.5Sr0.5TiO3 thin films on the LaA1O3 substrate was confirmed by x-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy. The quite good dielectric and electrical properties of crystalline Ba0.5Sr0.5TiO3 thin films suggest that Ba0.5Sr0.5TiO3/SrRuO3 is a good combination in terms of structural, electrical, and dielectric properties of Ba0.5Sr0.5TiO3 thin films.

AB - High crystallinity Ba0.5Sr0.5TiO3 thin films were deposited on LaAlO3 substrates by pulsed laser deposition. A conductive metallic oxide, SrRuO3, provided not only a good bottom electrode for Ba0.5Sr0.5TiO3 but also an excellent seed layer for epitaxial growth of Ba0.5Sr0.5TiO3 on it. The epitaxial nature of the Ba0.5Sr0.5TiO3 thin films on the LaA1O3 substrate was confirmed by x-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy. The quite good dielectric and electrical properties of crystalline Ba0.5Sr0.5TiO3 thin films suggest that Ba0.5Sr0.5TiO3/SrRuO3 is a good combination in terms of structural, electrical, and dielectric properties of Ba0.5Sr0.5TiO3 thin films.

UR - https://www.scopus.com/pages/publications/84952395040

U2 - 10.1080/10584589508012265

DO - 10.1080/10584589508012265

M3 - Article

AN - SCOPUS:84952395040

SN - 1058-4587

VL - 10

SP - 73

EP - 79

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -

Characterization of Ba_0.5Sr_0.5TiO₃Thin Film Capacitors Produced by Pulsed Laser Deposition

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