CHARACTERIZATION OF AMORPHOUS SILICON FOR LOW COST MIS SOLAR CELLS.

Theoretical considerations indicate that as compared to other possible structures, the MIS structures are best suited for solar cells on non-crystalline semiconductors. In preliminary experiments, MIS diodes were fabricated on e-beam deposited a-Si using thermal evaporation of top metal layer. The I-V characteristics of Cr-Cu-Cr/a-Si diodes were measured as a function of temperature in the range of 200-400 degree K. Also, at room temperature, the high frequency C-V and G- omega characteristics were measured. The analysis of the experimental data suggests that the current conduction in these devices is space charge limited, with the carriers hopping between the space charge ″pockets″ .