Characterization and Modeling of Co/BaTiO3/SrRuO3 Ferroelectric Tunnel Junction Memory by Capacitance-Voltage (C-V), Current-Voltage (I-V), and High-Frequency Measurements

Mohammad Abuwasib; Hyungwoo Lee; Jung Woo Lee; Chang Beom Eom; Alexei Gruverman; Uttam Singisetti

doi:10.1109/TED.2019.2904019

Characterization and Modeling of Co/BaTiO₃/SrRuO₃ Ferroelectric Tunnel Junction Memory by Capacitance-Voltage (C-V), Current-Voltage (I-V), and High-Frequency Measurements

Mohammad Abuwasib
, Hyungwoo Lee
, Jung Woo Lee
, Chang Beom Eom
, Alexei Gruverman
, Uttam Singisetti

Department of Electrical Engineering

SUNY Buffalo
University of Wisconsin-Madison
University of Nebraska-Lincoln

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Ferroelectric tunnel junction (FTJ) is a promising low power nonvolatile memory for beyond-CMOS applications. In this paper, Co/BaTiO₃/SrRuO₃ FTJs are fabricated, simulated, and their electrical characteristics are measured by capacitance-voltage (C-V), current.voltage (I-V ), and high-frequency S-parameter measurements. Ferroelectricity of the ultrathin BaTiO₃ (∼3.2 nm) film is first verified by a butterfly shaped hysteresis C-V profile, from which saturation polarizations are calculated in the ON state and OFF state as P_ON = +20 μC/cm² and P_OFF = -25 μC/cm², respectively. The numerical simulation of the FTJ device is performed using experimental electronic band parameters of the heterostructure. The device structure was optimized for ON/OFF ratio, I_ON/I_OFF = 75 for a depolarization field, E_dpol < 10⁶ V/cm. The calculated tunnel currents of 250 nm × 250 nm FTJ in ON state (I_ON = 130 × 10^-9 A) and OFF state (I_OFF = 1.75 × 10^-9 A) match with experimental values. From the S-parameters of RF measurements, the high-frequency small-signal device model of the FTJ in ON state (C_ON = 5 fF, R_ON = 0.8 MΩ) and OFF state (C_OFF = 10 fF, R_OFF = 70 MΩ) is developed for a frequency range from 50 MHz to 5 GHz. The extracted capacitor model of Co/BaTiO₃/SrRuO₃ FTJ is useful for high-frequency simulation of benchmark FTJ circuits.

Original language	English
Article number	8681233
Pages (from-to)	2186-2191
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	5
DOIs	https://doi.org/10.1109/TED.2019.2904019
State	Published - May 2019

Keywords

Benchmarking
beyond CMOS
ferroelectric capacitor
ferroelectric tunnel junction
FTJ memory
hysteresis C-V profile
nonvolatile memory
S-parameter
tunnel current
ultrathin ferroelectric oxide (FEO)

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10.1109/TED.2019.2904019

Cite this

Abuwasib, M., Lee, H., Lee, J. W., Eom, C. B., Gruverman, A., & Singisetti, U. (2019). Characterization and Modeling of Co/BaTiO₃/SrRuO₃ Ferroelectric Tunnel Junction Memory by Capacitance-Voltage (C-V), Current-Voltage (I-V), and High-Frequency Measurements. IEEE Transactions on Electron Devices, 66(5), 2186-2191. Article 8681233. https://doi.org/10.1109/TED.2019.2904019

@article{26fd580b118345b88bcb06b0793a89c5,

title = "Characterization and Modeling of Co/BaTiO3/SrRuO3 Ferroelectric Tunnel Junction Memory by Capacitance-Voltage (C-V), Current-Voltage (I-V), and High-Frequency Measurements",

abstract = "Ferroelectric tunnel junction (FTJ) is a promising low power nonvolatile memory for beyond-CMOS applications. In this paper, Co/BaTiO3/SrRuO3 FTJs are fabricated, simulated, and their electrical characteristics are measured by capacitance-voltage (C-V), current.voltage (I-V ), and high-frequency S-parameter measurements. Ferroelectricity of the ultrathin BaTiO3 (∼3.2 nm) film is first verified by a butterfly shaped hysteresis C-V profile, from which saturation polarizations are calculated in the ON state and OFF state as PON = +20 μC/cm2 and POFF = -25 μC/cm2, respectively. The numerical simulation of the FTJ device is performed using experimental electronic band parameters of the heterostructure. The device structure was optimized for ON/OFF ratio, ION/IOFF = 75 for a depolarization field, Edpol < 106 V/cm. The calculated tunnel currents of 250 nm × 250 nm FTJ in ON state (ION = 130 × 10-9 A) and OFF state (IOFF = 1.75 × 10-9 A) match with experimental values. From the S-parameters of RF measurements, the high-frequency small-signal device model of the FTJ in ON state (CON = 5 fF, RON = 0.8 MΩ) and OFF state (COFF = 10 fF, ROFF = 70 MΩ) is developed for a frequency range from 50 MHz to 5 GHz. The extracted capacitor model of Co/BaTiO3/SrRuO3 FTJ is useful for high-frequency simulation of benchmark FTJ circuits.",

keywords = "Benchmarking, beyond CMOS, ferroelectric capacitor, ferroelectric tunnel junction, FTJ memory, hysteresis C-V profile, nonvolatile memory, S-parameter, tunnel current, ultrathin ferroelectric oxide (FEO)",

author = "Mohammad Abuwasib and Hyungwoo Lee and Lee, \{Jung Woo\} and Eom, \{Chang Beom\} and Alexei Gruverman and Uttam Singisetti",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.",

year = "2019",

month = may,

doi = "10.1109/TED.2019.2904019",

language = "English",

volume = "66",

pages = "2186--2191",

journal = "IEEE Transactions on Electron Devices",

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Characterization and Modeling of Co/BaTiO₃/SrRuO₃ Ferroelectric Tunnel Junction Memory by Capacitance-Voltage (C-V), Current-Voltage (I-V), and High-Frequency Measurements. / Abuwasib, Mohammad; Lee, Hyungwoo; Lee, Jung Woo et al.
In: IEEE Transactions on Electron Devices, Vol. 66, No. 5, 8681233, 05.2019, p. 2186-2191.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characterization and Modeling of Co/BaTiO3/SrRuO3 Ferroelectric Tunnel Junction Memory by Capacitance-Voltage (C-V), Current-Voltage (I-V), and High-Frequency Measurements

AU - Abuwasib, Mohammad

AU - Lee, Hyungwoo

AU - Lee, Jung Woo

AU - Eom, Chang Beom

AU - Gruverman, Alexei

AU - Singisetti, Uttam

PY - 2019/5

Y1 - 2019/5

N2 - Ferroelectric tunnel junction (FTJ) is a promising low power nonvolatile memory for beyond-CMOS applications. In this paper, Co/BaTiO3/SrRuO3 FTJs are fabricated, simulated, and their electrical characteristics are measured by capacitance-voltage (C-V), current.voltage (I-V ), and high-frequency S-parameter measurements. Ferroelectricity of the ultrathin BaTiO3 (∼3.2 nm) film is first verified by a butterfly shaped hysteresis C-V profile, from which saturation polarizations are calculated in the ON state and OFF state as PON = +20 μC/cm2 and POFF = -25 μC/cm2, respectively. The numerical simulation of the FTJ device is performed using experimental electronic band parameters of the heterostructure. The device structure was optimized for ON/OFF ratio, ION/IOFF = 75 for a depolarization field, Edpol < 106 V/cm. The calculated tunnel currents of 250 nm × 250 nm FTJ in ON state (ION = 130 × 10-9 A) and OFF state (IOFF = 1.75 × 10-9 A) match with experimental values. From the S-parameters of RF measurements, the high-frequency small-signal device model of the FTJ in ON state (CON = 5 fF, RON = 0.8 MΩ) and OFF state (COFF = 10 fF, ROFF = 70 MΩ) is developed for a frequency range from 50 MHz to 5 GHz. The extracted capacitor model of Co/BaTiO3/SrRuO3 FTJ is useful for high-frequency simulation of benchmark FTJ circuits.

AB - Ferroelectric tunnel junction (FTJ) is a promising low power nonvolatile memory for beyond-CMOS applications. In this paper, Co/BaTiO3/SrRuO3 FTJs are fabricated, simulated, and their electrical characteristics are measured by capacitance-voltage (C-V), current.voltage (I-V ), and high-frequency S-parameter measurements. Ferroelectricity of the ultrathin BaTiO3 (∼3.2 nm) film is first verified by a butterfly shaped hysteresis C-V profile, from which saturation polarizations are calculated in the ON state and OFF state as PON = +20 μC/cm2 and POFF = -25 μC/cm2, respectively. The numerical simulation of the FTJ device is performed using experimental electronic band parameters of the heterostructure. The device structure was optimized for ON/OFF ratio, ION/IOFF = 75 for a depolarization field, Edpol < 106 V/cm. The calculated tunnel currents of 250 nm × 250 nm FTJ in ON state (ION = 130 × 10-9 A) and OFF state (IOFF = 1.75 × 10-9 A) match with experimental values. From the S-parameters of RF measurements, the high-frequency small-signal device model of the FTJ in ON state (CON = 5 fF, RON = 0.8 MΩ) and OFF state (COFF = 10 fF, ROFF = 70 MΩ) is developed for a frequency range from 50 MHz to 5 GHz. The extracted capacitor model of Co/BaTiO3/SrRuO3 FTJ is useful for high-frequency simulation of benchmark FTJ circuits.

KW - Benchmarking

KW - beyond CMOS

KW - ferroelectric capacitor

KW - ferroelectric tunnel junction

KW - FTJ memory

KW - hysteresis C-V profile

KW - nonvolatile memory

KW - S-parameter

KW - tunnel current

KW - ultrathin ferroelectric oxide (FEO)

UR - https://www.scopus.com/pages/publications/85064969958

U2 - 10.1109/TED.2019.2904019

DO - 10.1109/TED.2019.2904019

M3 - Article

AN - SCOPUS:85064969958

SN - 0018-9383

VL - 66

SP - 2186

EP - 2191

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

M1 - 8681233

ER -

Characterization and Modeling of Co/BaTiO₃/SrRuO₃ Ferroelectric Tunnel Junction Memory by Capacitance-Voltage (C-V), Current-Voltage (I-V), and High-Frequency Measurements

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