Characteristics of SrBi2Ta2O9 thin films on (100) LaAlO3 and Pt/Ti/SiO2/Si

J. Y. Son; S. H. Bang; J. H. Cho; Q. X. Jia

Characteristics of SrBi₂Ta₂O₉ thin films on (100) LaAlO₃ and Pt/Ti/SiO₂/Si

J. Y. Son
, S. H. Bang
, J. H. Cho
, Q. X. Jia

Department of Materials Design and Innovation

Pusan National University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The SrBi₂Ta₂O₉ thin films were prepared on (100) LaAlO₃ and Pt/Ti/SiO₂/Si substrate by pulsed laser ablation deposition method (Nd:YAG, 355 nm, ∼2 J/cm²) with deposition temperature (T_s) range of 500-800°C and their structural and physical properties were investigated. The SrBi₂Ta₂O₉ thin films on LaAlO₃ substrates have (a00) epitaxial growth at T_s = 650°C as well as the (00l) epitaxial growth at T_s = 780°C. The transmission spectra indicate anisotropic characteristics. The SrBi₂Ta₂O₉ thin films on Pt/Ti/SiO₂/Si substrates show polycrystalline structures. For Au/SrBi₂Ta₂O₉/Pt capacitors, the dielectric constants at deposition temperature 700°C and 760°C are ∼ 340 and ∼ 230, respectively.

Original language	English
Pages (from-to)	S1521-S1524
Journal	Journal of the Korean Physical Society
Volume	32
Issue number	4 SUPPL.
State	Published - 1998

Cite this

@article{437770e2a9f944358e95e246a5be31c7,

title = "Characteristics of SrBi2Ta2O9 thin films on (100) LaAlO3 and Pt/Ti/SiO2/Si",

abstract = "The SrBi2Ta2O9 thin films were prepared on (100) LaAlO3 and Pt/Ti/SiO2/Si substrate by pulsed laser ablation deposition method (Nd:YAG, 355 nm, ∼2 J/cm2) with deposition temperature (Ts) range of 500-800°C and their structural and physical properties were investigated. The SrBi2Ta2O9 thin films on LaAlO3 substrates have (a00) epitaxial growth at Ts = 650°C as well as the (00l) epitaxial growth at Ts = 780°C. The transmission spectra indicate anisotropic characteristics. The SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates show polycrystalline structures. For Au/SrBi2Ta2O9/Pt capacitors, the dielectric constants at deposition temperature 700°C and 760°C are ∼ 340 and ∼ 230, respectively.",

author = "Son, \{J. Y.\} and Bang, \{S. H.\} and Cho, \{J. H.\} and Jia, \{Q. X.\}",

year = "1998",

language = "English",

volume = "32",

pages = "S1521--S1524",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "4 SUPPL.",

}

TY - JOUR

T1 - Characteristics of SrBi2Ta2O9 thin films on (100) LaAlO3 and Pt/Ti/SiO2/Si

AU - Son, J. Y.

AU - Bang, S. H.

AU - Cho, J. H.

AU - Jia, Q. X.

PY - 1998

Y1 - 1998

N2 - The SrBi2Ta2O9 thin films were prepared on (100) LaAlO3 and Pt/Ti/SiO2/Si substrate by pulsed laser ablation deposition method (Nd:YAG, 355 nm, ∼2 J/cm2) with deposition temperature (Ts) range of 500-800°C and their structural and physical properties were investigated. The SrBi2Ta2O9 thin films on LaAlO3 substrates have (a00) epitaxial growth at Ts = 650°C as well as the (00l) epitaxial growth at Ts = 780°C. The transmission spectra indicate anisotropic characteristics. The SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates show polycrystalline structures. For Au/SrBi2Ta2O9/Pt capacitors, the dielectric constants at deposition temperature 700°C and 760°C are ∼ 340 and ∼ 230, respectively.

AB - The SrBi2Ta2O9 thin films were prepared on (100) LaAlO3 and Pt/Ti/SiO2/Si substrate by pulsed laser ablation deposition method (Nd:YAG, 355 nm, ∼2 J/cm2) with deposition temperature (Ts) range of 500-800°C and their structural and physical properties were investigated. The SrBi2Ta2O9 thin films on LaAlO3 substrates have (a00) epitaxial growth at Ts = 650°C as well as the (00l) epitaxial growth at Ts = 780°C. The transmission spectra indicate anisotropic characteristics. The SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates show polycrystalline structures. For Au/SrBi2Ta2O9/Pt capacitors, the dielectric constants at deposition temperature 700°C and 760°C are ∼ 340 and ∼ 230, respectively.

UR - https://www.scopus.com/pages/publications/0032389348

M3 - Article

AN - SCOPUS:0032389348

SN - 0374-4884

VL - 32

SP - S1521-S1524

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4 SUPPL.

ER -

Characteristics of SrBi₂Ta₂O₉ thin films on (100) LaAlO₃ and Pt/Ti/SiO₂/Si

Abstract

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