Chaotic behavior in quantum transport devices

S. Harada; N. Kida; T. Morimoto; M. Hemmi; R. Naito; T. Sasaki; N. Aoki; T. Harayama; J. P. Bird; Y. Ochiai

doi:10.1063/1.1994190

Chaotic behavior in quantum transport devices

S. Harada
, N. Kida
, T. Morimoto
, M. Hemmi
, R. Naito
, T. Sasaki
, N. Aoki
, T. Harayama
, J. P. Bird
, Y. Ochiai

Department of Electrical Engineering

Chiba University
Advanced Telecommunications Research Institute International

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have studied transport properties in the low-temperature magnetoresistance through the ballistic narrow path restricted by a short width metallic gate on the 2 dimentional electron gas (2DEG) system. An alternate and systematic variation between a Lorentzian line fitting and a cusp-like line fitting in the zero-field peaks has been observed, as sweeping the gate voltage. It indicates a possibility of existence of chaotic and regular paths on the short gated ballistic/tunneling transport. We will discuss on the quantum chaos behavior on the systematic variation between the Lorentzian and the cusp-like peakshape based on the disordered path system under the short gate.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	475-476
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994190
State	Published - Jun 30 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	07/26/04 → 07/30/04

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10.1063/1.1994190

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title = "Chaotic behavior in quantum transport devices",

abstract = "We have studied transport properties in the low-temperature magnetoresistance through the ballistic narrow path restricted by a short width metallic gate on the 2 dimentional electron gas (2DEG) system. An alternate and systematic variation between a Lorentzian line fitting and a cusp-like line fitting in the zero-field peaks has been observed, as sweeping the gate voltage. It indicates a possibility of existence of chaotic and regular paths on the short gated ballistic/tunneling transport. We will discuss on the quantum chaos behavior on the systematic variation between the Lorentzian and the cusp-like peakshape based on the disordered path system under the short gate.",

author = "S. Harada and N. Kida and T. Morimoto and M. Hemmi and R. Naito and T. Sasaki and N. Aoki and T. Harayama and Bird, \{J. P.\} and Y. Ochiai",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994190",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings",

pages = "475--476",

booktitle = "PHYSICS OF SEMICONDUCTORS",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

Harada, S, Kida, N, Morimoto, T, Hemmi, M, Naito, R, Sasaki, T, Aoki, N, Harayama, T, Bird, JP & Ochiai, Y 2005, Chaotic behavior in quantum transport devices. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 475-476, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 07/26/04. https://doi.org/10.1063/1.1994190

TY - GEN

T1 - Chaotic behavior in quantum transport devices

AU - Harada, S.

AU - Kida, N.

AU - Morimoto, T.

AU - Hemmi, M.

AU - Naito, R.

AU - Sasaki, T.

AU - Aoki, N.

AU - Harayama, T.

AU - Bird, J. P.

AU - Ochiai, Y.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - We have studied transport properties in the low-temperature magnetoresistance through the ballistic narrow path restricted by a short width metallic gate on the 2 dimentional electron gas (2DEG) system. An alternate and systematic variation between a Lorentzian line fitting and a cusp-like line fitting in the zero-field peaks has been observed, as sweeping the gate voltage. It indicates a possibility of existence of chaotic and regular paths on the short gated ballistic/tunneling transport. We will discuss on the quantum chaos behavior on the systematic variation between the Lorentzian and the cusp-like peakshape based on the disordered path system under the short gate.

AB - We have studied transport properties in the low-temperature magnetoresistance through the ballistic narrow path restricted by a short width metallic gate on the 2 dimentional electron gas (2DEG) system. An alternate and systematic variation between a Lorentzian line fitting and a cusp-like line fitting in the zero-field peaks has been observed, as sweeping the gate voltage. It indicates a possibility of existence of chaotic and regular paths on the short gated ballistic/tunneling transport. We will discuss on the quantum chaos behavior on the systematic variation between the Lorentzian and the cusp-like peakshape based on the disordered path system under the short gate.

UR - https://www.scopus.com/pages/publications/33749464340

U2 - 10.1063/1.1994190

DO - 10.1063/1.1994190

M3 - Conference contribution

AN - SCOPUS:33749464340

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 475

EP - 476

BT - PHYSICS OF SEMICONDUCTORS

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -

Chaotic behavior in quantum transport devices

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