TY - GEN
T1 - Cerium oxide thin films via ion assisted electron beam deposition
AU - Dansoh, V.
AU - Gertz, F.
AU - Gump, J.
AU - Johnson, A.
AU - Jung, J. I.
AU - Klingensmith, M.
AU - Liu, Y.
AU - Liu, Y. D.
AU - Oxaal, J. T.
AU - Wang, C. J.
AU - Wynick, G.
AU - Edwards, D.
AU - Fan, J. H.
AU - Wang, X. W.
AU - Bush, P. J.
AU - Fuchser, A.
PY - 2009
Y1 - 2009
N2 - We report new results on as-deposited cerium oxide thin films with substrate temperatures near 423 Kelvin, via a modified oxygen ion assisted electron beam deposition. In contrast to a conventional ion assisted electron beam deposition process in which the ion beam "milling" and vapor condensation take place simultaneously on a substrate surface, in this process, the ion beam "milling" takes place in a periodically pulsed format while the vapor condensation takes place continuously on a substrate surface. In contrast to an argon ion assisted electron beam deposition process, the oxygen ion source utilized in this process is to fully oxidize the deposited film in situ. The materials properties of the films are analyzed by x-ray diffraction, scanning electron microscopy, energy dispersive X-Ray analysis, Raman image spectroscopy, and variable angle spectroscopic ellipsometry. The film's electrical conductivity is analyzed by through-film impedance spectroscopy from 373K to 1,073K, which enables the determination of the activation energy. A film fabricated by this process appears to have a "sheet-stacking" structure. The coated metallic substrate's tensile stress is measured to make sure that the coating does not negatively affect the mechanical strength of the substrate. The through-film activation energy is measured to be 0.62 ± 0.10 eV, which is comparable to that of the bulk material and some of the thin film materials.
AB - We report new results on as-deposited cerium oxide thin films with substrate temperatures near 423 Kelvin, via a modified oxygen ion assisted electron beam deposition. In contrast to a conventional ion assisted electron beam deposition process in which the ion beam "milling" and vapor condensation take place simultaneously on a substrate surface, in this process, the ion beam "milling" takes place in a periodically pulsed format while the vapor condensation takes place continuously on a substrate surface. In contrast to an argon ion assisted electron beam deposition process, the oxygen ion source utilized in this process is to fully oxidize the deposited film in situ. The materials properties of the films are analyzed by x-ray diffraction, scanning electron microscopy, energy dispersive X-Ray analysis, Raman image spectroscopy, and variable angle spectroscopic ellipsometry. The film's electrical conductivity is analyzed by through-film impedance spectroscopy from 373K to 1,073K, which enables the determination of the activation energy. A film fabricated by this process appears to have a "sheet-stacking" structure. The coated metallic substrate's tensile stress is measured to make sure that the coating does not negatively affect the mechanical strength of the substrate. The through-film activation energy is measured to be 0.62 ± 0.10 eV, which is comparable to that of the bulk material and some of the thin film materials.
UR - https://www.scopus.com/pages/publications/62849097475
M3 - Conference contribution
AN - SCOPUS:62849097475
SN - 9780470344958
T3 - Ceramic Engineering and Science Proceedings
SP - 87
EP - 98
BT - Advanced Ceramic Coatings and Interfaces III - A Collection of Papers Presented at the 32nd International Conference on Advanced Ceramics and Composites
T2 - Advanced Ceramic Coatings and Interfaces III - 32nd International Conference on Advanced Ceramics and Composites
Y2 - 27 January 2008 through 1 February 2008
ER -