Cavity enhanced 1.5 μm LED with silicon as a hole injector

Dong Liu; Zhenyang Xia; Sang June Cho; Deyin Zhao; Huilong Zhang; Tzu Hsuan Chang; Xin Yin; Munho Kim; Jung Hun Seo; Jaeseong Lee; Xudong Wang; Weidong Zhou; Zhenqiang Ma

doi:10.1117/12.2213957

Cavity enhanced 1.5 μm LED with silicon as a hole injector

Dong Liu
, Zhenyang Xia
, Sang June Cho
, Deyin Zhao
, Huilong Zhang
, Tzu Hsuan Chang
, Xin Yin
, Munho Kim
, Jung Hun Seo
, Jaeseong Lee
, Xudong Wang
, Weidong Zhou
, Zhenqiang Ma

Department of Materials Design and Innovation

University of Wisconsin-Madison
University of Texas at Arlington

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Here we report the demonstration of a Si/InAlGaAs/InP PIN cavity enhanced LED around 1.5 um by using membrane transfer method. The silicon layer is acting not only as the optical guiding layer but also the hole injection layer. The new hybrid integrated LED could be further developed as laser source for silicon photonics.

Original language	English
Title of host publication	Novel In-Plane Semiconductor Lasers XV
Editors	Alexey A. Belyanin, Peter M. Smowton
Publisher	SPIE
ISBN (Electronic)	9781510600027
DOIs	https://doi.org/10.1117/12.2213957
State	Published - 2016
Event	Novel In-Plane Semiconductor Lasers XV - San Francisco, United States Duration: Feb 15 2016 → Feb 18 2016

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9767
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Novel In-Plane Semiconductor Lasers XV
Country/Territory	United States
City	San Francisco
Period	02/15/16 → 02/18/16

Keywords

Heterojunction
LED
Silicon photonics

Access to Document

10.1117/12.2213957

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Liu, D., Xia, Z., Cho, S. J., Zhao, D., Zhang, H., Chang, T. H., Yin, X., Kim, M., Seo, J. H., Lee, J., Wang, X., Zhou, W., & Ma, Z. (2016). Cavity enhanced 1.5 μm LED with silicon as a hole injector. In A. A. Belyanin, & P. M. Smowton (Eds.), Novel In-Plane Semiconductor Lasers XV Article 97670Y (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9767). SPIE. https://doi.org/10.1117/12.2213957

@inproceedings{968c4571db7b427baee58f3a2c001452,

title = "Cavity enhanced 1.5 μm LED with silicon as a hole injector",

abstract = "Here we report the demonstration of a Si/InAlGaAs/InP PIN cavity enhanced LED around 1.5 um by using membrane transfer method. The silicon layer is acting not only as the optical guiding layer but also the hole injection layer. The new hybrid integrated LED could be further developed as laser source for silicon photonics.",

keywords = "Heterojunction, LED, Silicon photonics",

author = "Dong Liu and Zhenyang Xia and Cho, \{Sang June\} and Deyin Zhao and Huilong Zhang and Chang, \{Tzu Hsuan\} and Xin Yin and Munho Kim and Seo, \{Jung Hun\} and Jaeseong Lee and Xudong Wang and Weidong Zhou and Zhenqiang Ma",

note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Novel In-Plane Semiconductor Lasers XV ; Conference date: 15-02-2016 Through 18-02-2016",

year = "2016",

doi = "10.1117/12.2213957",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Belyanin, \{Alexey A.\} and Smowton, \{Peter M.\}",

booktitle = "Novel In-Plane Semiconductor Lasers XV",

address = "United States",

}

Liu, D, Xia, Z, Cho, SJ, Zhao, D, Zhang, H, Chang, TH, Yin, X, Kim, M, Seo, JH, Lee, J, Wang, X, Zhou, W & Ma, Z 2016, Cavity enhanced 1.5 μm LED with silicon as a hole injector. in AA Belyanin & PM Smowton (eds), Novel In-Plane Semiconductor Lasers XV., 97670Y, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9767, SPIE, Novel In-Plane Semiconductor Lasers XV, San Francisco, United States, 02/15/16. https://doi.org/10.1117/12.2213957

Cavity enhanced 1.5 μm LED with silicon as a hole injector. / Liu, Dong; Xia, Zhenyang; Cho, Sang June et al.
Novel In-Plane Semiconductor Lasers XV. ed. / Alexey A. Belyanin; Peter M. Smowton. SPIE, 2016. 97670Y (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9767).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Cavity enhanced 1.5 μm LED with silicon as a hole injector

AU - Liu, Dong

AU - Xia, Zhenyang

AU - Cho, Sang June

AU - Zhao, Deyin

AU - Zhang, Huilong

AU - Chang, Tzu Hsuan

AU - Yin, Xin

AU - Kim, Munho

AU - Seo, Jung Hun

AU - Lee, Jaeseong

AU - Wang, Xudong

AU - Zhou, Weidong

AU - Ma, Zhenqiang

PY - 2016

Y1 - 2016

N2 - Here we report the demonstration of a Si/InAlGaAs/InP PIN cavity enhanced LED around 1.5 um by using membrane transfer method. The silicon layer is acting not only as the optical guiding layer but also the hole injection layer. The new hybrid integrated LED could be further developed as laser source for silicon photonics.

AB - Here we report the demonstration of a Si/InAlGaAs/InP PIN cavity enhanced LED around 1.5 um by using membrane transfer method. The silicon layer is acting not only as the optical guiding layer but also the hole injection layer. The new hybrid integrated LED could be further developed as laser source for silicon photonics.

KW - Heterojunction

KW - LED

KW - Silicon photonics

UR - https://www.scopus.com/pages/publications/84978492500

U2 - 10.1117/12.2213957

DO - 10.1117/12.2213957

M3 - Conference contribution

AN - SCOPUS:84978492500

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Novel In-Plane Semiconductor Lasers XV

A2 - Belyanin, Alexey A.

A2 - Smowton, Peter M.

PB - SPIE

T2 - Novel In-Plane Semiconductor Lasers XV

Y2 - 15 February 2016 through 18 February 2016

ER -

Cavity enhanced 1.5 μm LED with silicon as a hole injector

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