Carrier recombination dynamics of InGaN/GaN LEDs and its applications to the optimization of UV generation efficiency

J. P. Basrur; F. S. Choa; P. L. Liu; J. Sipior; G. Rao; G. M. Carter; Y. J. Chen

Carrier recombination dynamics of InGaN/GaN LEDs and its applications to the optimization of UV generation efficiency

J. P. Basrur
, F. S. Choa
, P. L. Liu
, J. Sipior
, G. Rao
, G. M. Carter
, Y. J. Chen

Department of Electrical Engineering

University of Maryland, Baltimore County

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

To obtain small size high speed ultraviolet sources, we studied the UV generation process and efficiency of GaN Blue LEDs. The blue and UV emissions follow a 4-level recombination model. Depending on a given pump pulse amplitude the UV to blue generation ratio increases and saturates with the increasing of pump pulse duration. High efficiency, up to 450 μ W UV power at 380 nm, can be obtained from a 1.2 mW blue LED.

Original language	English
Pages (from-to)	1185-1190
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	449
State	Published - 1997
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

Cite this

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title = "Carrier recombination dynamics of InGaN/GaN LEDs and its applications to the optimization of UV generation efficiency",

abstract = "To obtain small size high speed ultraviolet sources, we studied the UV generation process and efficiency of GaN Blue LEDs. The blue and UV emissions follow a 4-level recombination model. Depending on a given pump pulse amplitude the UV to blue generation ratio increases and saturates with the increasing of pump pulse duration. High efficiency, up to 450 μ W UV power at 380 nm, can be obtained from a 1.2 mW blue LED.",

author = "Basrur, \{J. P.\} and Choa, \{F. S.\} and Liu, \{P. L.\} and J. Sipior and G. Rao and Carter, \{G. M.\} and Chen, \{Y. J.\}",

year = "1997",

language = "English",

volume = "449",

pages = "1185--1190",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1996 MRS Fall Symposium ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Carrier recombination dynamics of InGaN/GaN LEDs and its applications to the optimization of UV generation efficiency

AU - Basrur, J. P.

AU - Choa, F. S.

AU - Liu, P. L.

AU - Sipior, J.

AU - Rao, G.

AU - Carter, G. M.

AU - Chen, Y. J.

PY - 1997

Y1 - 1997

N2 - To obtain small size high speed ultraviolet sources, we studied the UV generation process and efficiency of GaN Blue LEDs. The blue and UV emissions follow a 4-level recombination model. Depending on a given pump pulse amplitude the UV to blue generation ratio increases and saturates with the increasing of pump pulse duration. High efficiency, up to 450 μ W UV power at 380 nm, can be obtained from a 1.2 mW blue LED.

AB - To obtain small size high speed ultraviolet sources, we studied the UV generation process and efficiency of GaN Blue LEDs. The blue and UV emissions follow a 4-level recombination model. Depending on a given pump pulse amplitude the UV to blue generation ratio increases and saturates with the increasing of pump pulse duration. High efficiency, up to 450 μ W UV power at 380 nm, can be obtained from a 1.2 mW blue LED.

UR - https://www.scopus.com/pages/publications/0030711975

M3 - Conference article

AN - SCOPUS:0030711975

SN - 0272-9172

VL - 449

SP - 1185

EP - 1190

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Symposium

Y2 - 2 December 1996 through 6 December 1996

ER -

Carrier recombination dynamics of InGaN/GaN LEDs and its applications to the optimization of UV generation efficiency

Abstract

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