Carrier multiplication in bulk indium nitride

S. A. Jensen; J. Versluis; E. Cánovas; J. J.H. Pijpers; I. R. Sellers; M. Bonn

doi:10.1063/1.4766738

Carrier multiplication in bulk indium nitride

S. A. Jensen
, J. Versluis
, E. Cánovas
, J. J.H. Pijpers
, I. R. Sellers
, M. Bonn

Department of Electrical Engineering

AMOLF
Max Planck Institute for Polymer Research
Sun Catalytix Corporation

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Carrier multiplication (CM) is the process of generating multiple electron-hole pairs from one absorbed photon. Narrow-gap InN is a material that has been proposed for achieving efficient CM. We quantify the CM efficiency in bulk InN using terahertz time-domain spectroscopy. While the CM onset occurs at relatively low photon energies in InN (1.7 ± 0.2 eV), corresponding to 2.7 ± 0.3 times its bandgap, the excitation efficiency above the onset increases linearly with a slope of only ∼13/E_g. Based on these numbers, the efficiency increase of an InN based photovoltaic device owing to CM is limited to maximum 1 point.

Original language	English
Article number	222113
Journal	Applied Physics Letters
Volume	101
Issue number	22
DOIs	https://doi.org/10.1063/1.4766738
State	Published - Nov 26 2012

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title = "Carrier multiplication in bulk indium nitride",

abstract = "Carrier multiplication (CM) is the process of generating multiple electron-hole pairs from one absorbed photon. Narrow-gap InN is a material that has been proposed for achieving efficient CM. We quantify the CM efficiency in bulk InN using terahertz time-domain spectroscopy. While the CM onset occurs at relatively low photon energies in InN (1.7 ± 0.2 eV), corresponding to 2.7 ± 0.3 times its bandgap, the excitation efficiency above the onset increases linearly with a slope of only ∼13/Eg. Based on these numbers, the efficiency increase of an InN based photovoltaic device owing to CM is limited to maximum 1 point.",

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AU - Jensen, S. A.

AU - Versluis, J.

AU - Cánovas, E.

AU - Pijpers, J. J.H.

AU - Sellers, I. R.

AU - Bonn, M.

PY - 2012/11/26

Y1 - 2012/11/26

N2 - Carrier multiplication (CM) is the process of generating multiple electron-hole pairs from one absorbed photon. Narrow-gap InN is a material that has been proposed for achieving efficient CM. We quantify the CM efficiency in bulk InN using terahertz time-domain spectroscopy. While the CM onset occurs at relatively low photon energies in InN (1.7 ± 0.2 eV), corresponding to 2.7 ± 0.3 times its bandgap, the excitation efficiency above the onset increases linearly with a slope of only ∼13/Eg. Based on these numbers, the efficiency increase of an InN based photovoltaic device owing to CM is limited to maximum 1 point.

AB - Carrier multiplication (CM) is the process of generating multiple electron-hole pairs from one absorbed photon. Narrow-gap InN is a material that has been proposed for achieving efficient CM. We quantify the CM efficiency in bulk InN using terahertz time-domain spectroscopy. While the CM onset occurs at relatively low photon energies in InN (1.7 ± 0.2 eV), corresponding to 2.7 ± 0.3 times its bandgap, the excitation efficiency above the onset increases linearly with a slope of only ∼13/Eg. Based on these numbers, the efficiency increase of an InN based photovoltaic device owing to CM is limited to maximum 1 point.

UR - https://www.scopus.com/pages/publications/84870537706

U2 - 10.1063/1.4766738

DO - 10.1063/1.4766738

M3 - Article

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SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222113

ER -

Carrier multiplication in bulk indium nitride

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