Carrier compensation mechanism in O+ implanted InP

L. He; W. A. Anderson

doi:10.1109/ICIPRM.1992.235684

Carrier compensation mechanism in O⁺ implanted InP

L. He
, W. A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Oxygen ion implantation in InP was studied by photoreflectance spectroscopy (PR) and electrical characterization. Current-voltage(I-V) measurement was used to study the properties of Schottky diodes fabricated on the implanted InP surface. Deep-level transient spectroscopy (DLTS) was employed to investigated the defect levels and their role in the compensation process. Two more electron traps with activation energies below the conduction band by 0.47eV and 0.28eV were found after implantation which is related to the implantation induced damage. Free carriers may be trapped in certain defect levels which decreases substrate concentration and the trap density. The compensation effect was stronger in undoped InP than in Sn-doped InP which shows that substrate doping will affect the degree of compensation.

Original language	English
Title of host publication	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	336-339
Number of pages	4
ISBN (Electronic)	0780305221, 9780780305229
DOIs	https://doi.org/10.1109/ICIPRM.1992.235684
State	Published - 1992
Event	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 - Newport, United States Duration: Apr 21 1992 → Apr 24 1992

Publication series

Name	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Conference

Conference	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
Country/Territory	United States
City	Newport
Period	04/21/92 → 04/24/92

Access to Document

10.1109/ICIPRM.1992.235684

Cite this

He, L., & Anderson, W. A. (1992). Carrier compensation mechanism in O⁺ implanted InP. In LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 (pp. 336-339). Article 235684 (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.1992.235684

He, L. ; Anderson, W. A. / Carrier compensation mechanism in O⁺ implanted InP. LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. pp. 336-339 (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992).

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title = "Carrier compensation mechanism in O+ implanted InP",

abstract = "Oxygen ion implantation in InP was studied by photoreflectance spectroscopy (PR) and electrical characterization. Current-voltage(I-V) measurement was used to study the properties of Schottky diodes fabricated on the implanted InP surface. Deep-level transient spectroscopy (DLTS) was employed to investigated the defect levels and their role in the compensation process. Two more electron traps with activation energies below the conduction band by 0.47eV and 0.28eV were found after implantation which is related to the implantation induced damage. Free carriers may be trapped in certain defect levels which decreases substrate concentration and the trap density. The compensation effect was stronger in undoped InP than in Sn-doped InP which shows that substrate doping will affect the degree of compensation.",

author = "L. He and Anderson, \{W. A.\}",

note = "Publisher Copyright: {\textcopyright} 1992 IEEE.; LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 ; Conference date: 21-04-1992 Through 24-04-1992",

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doi = "10.1109/ICIPRM.1992.235684",

language = "English",

series = "LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "336--339",

booktitle = "LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992",

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He, L & Anderson, WA 1992, Carrier compensation mechanism in O⁺ implanted InP. in LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992., 235684, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992, Institute of Electrical and Electronics Engineers Inc., pp. 336-339, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992, Newport, United States, 04/21/92. https://doi.org/10.1109/ICIPRM.1992.235684

Carrier compensation mechanism in O⁺ implanted InP. / He, L.; Anderson, W. A.
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 336-339 235684 (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - He, L.

AU - Anderson, W. A.

PY - 1992

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N2 - Oxygen ion implantation in InP was studied by photoreflectance spectroscopy (PR) and electrical characterization. Current-voltage(I-V) measurement was used to study the properties of Schottky diodes fabricated on the implanted InP surface. Deep-level transient spectroscopy (DLTS) was employed to investigated the defect levels and their role in the compensation process. Two more electron traps with activation energies below the conduction band by 0.47eV and 0.28eV were found after implantation which is related to the implantation induced damage. Free carriers may be trapped in certain defect levels which decreases substrate concentration and the trap density. The compensation effect was stronger in undoped InP than in Sn-doped InP which shows that substrate doping will affect the degree of compensation.

AB - Oxygen ion implantation in InP was studied by photoreflectance spectroscopy (PR) and electrical characterization. Current-voltage(I-V) measurement was used to study the properties of Schottky diodes fabricated on the implanted InP surface. Deep-level transient spectroscopy (DLTS) was employed to investigated the defect levels and their role in the compensation process. Two more electron traps with activation energies below the conduction band by 0.47eV and 0.28eV were found after implantation which is related to the implantation induced damage. Free carriers may be trapped in certain defect levels which decreases substrate concentration and the trap density. The compensation effect was stronger in undoped InP than in Sn-doped InP which shows that substrate doping will affect the degree of compensation.

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DO - 10.1109/ICIPRM.1992.235684

M3 - Conference contribution

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T3 - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

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BT - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Y2 - 21 April 1992 through 24 April 1992

ER -

He L, Anderson WA. Carrier compensation mechanism in O⁺ implanted InP. In LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 336-339. 235684. (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992). doi: 10.1109/ICIPRM.1992.235684