@inproceedings{8fc3fc96c8334e48a6e4aca8f1e8e4ca,
title = "Building the quasi one dimensional transistor from 2D materials",
abstract = "Here we describe some preliminary device results from field effect transistors made from metal trichalcogenides. Although not much investigated, is both promise and room for improvement. Improvements could come from better contacts and lower semiconductor channel defect densities, in metal trichalcogenides transistors. Devices with ohmic contacts have now been fabricated, and the surface termination of these materials modeled by density functional theory.",
keywords = "InSe, Novel materials for beyond CMOS, Quasi one dimensional semiconductors, TiS",
author = "Galiy, \{Pavlo V.\} and Michael Randle and Alexey Lipatov and Lu Wang and Simeon Gilbert and Nataliia Vorobeva and Avinash Kumar and Kwan, \{Chun Pui\} and Jubin Nathawat and Bilal Barut and Shenchu Yin and Nargess Arabchigavkani and Nenchuk, \{Taras M.\} and Takashi Komesu and Keke He and Andrew Yost and Uttam Singisetti and Mei, \{Wai Ning\} and Alexander Sinitskii and Bird, \{Jonathan P.\} and Dowben, \{Peter A.\}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2nd IEEE Ukraine Conference on Electrical and Computer Engineering, UKRCON 2019 ; Conference date: 02-07-2019 Through 06-07-2019",
year = "2019",
month = jul,
doi = "10.1109/UKRCON.2019.8879963",
language = "English",
series = "2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering, UKRCON 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "679--682",
editor = "Mariya Antyufeyeva",
booktitle = "2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering, UKRCON 2019 - Proceedings",
address = "United States",
}