Skip to main navigation Skip to search Skip to main content

Bipolar spintronics

  • University of Regensburg

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

By incorporating spin-dependent properties and magnetism in semiconductor structures, new applications can be considered which go beyond magnetoresistive effects based on metallic systems. Notwithstanding the prospects for spin/magnetism-enhanced logic in semiconductors, many important theoretical, experimental, and materials challenges remain. This chapter discusses the challenge for realizing a particular class of applications: the proposal here is for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. Nonlinear current-voltage characteristics, large deviations from local charge neutrality, as well as inhomogeneous built-in and applied fields, all have important implications on the bipolar transport and potential spin-based logic applications. This chapter formulates the theoretical framework for bipolar spin-polarized transport, and describes the novel effects in two- and threeterminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization.

Original languageEnglish
Title of host publicationConcepts in Spin Electronics
PublisherOxford University Press
Pages1-57
Number of pages57
Volume9780198568216
ISBN (Electronic)9780191718212
ISBN (Print)9780198568216
DOIs
StatePublished - Sep 1 2007

Keywords

  • Magnetic semiconductors
  • P-n junctions
  • Spin battery
  • Spin injection
  • Spin logic
  • Spin polarization
  • Spin relaxation
  • Spin transistors
  • Spin-polarized transport
  • Spin-voltaic effect

Fingerprint

Dive into the research topics of 'Bipolar spintronics'. Together they form a unique fingerprint.

Cite this