Abstract
By incorporating spin-dependent properties and magnetism in semiconductor structures, new applications can be considered which go beyond magnetoresistive effects based on metallic systems. Notwithstanding the prospects for spin/magnetism-enhanced logic in semiconductors, many important theoretical, experimental, and materials challenges remain. This chapter discusses the challenge for realizing a particular class of applications: the proposal here is for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. Nonlinear current-voltage characteristics, large deviations from local charge neutrality, as well as inhomogeneous built-in and applied fields, all have important implications on the bipolar transport and potential spin-based logic applications. This chapter formulates the theoretical framework for bipolar spin-polarized transport, and describes the novel effects in two- and threeterminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization.
| Original language | English |
|---|---|
| Title of host publication | Concepts in Spin Electronics |
| Publisher | Oxford University Press |
| Pages | 1-57 |
| Number of pages | 57 |
| Volume | 9780198568216 |
| ISBN (Electronic) | 9780191718212 |
| ISBN (Print) | 9780198568216 |
| DOIs | |
| State | Published - Sep 1 2007 |
Keywords
- Magnetic semiconductors
- P-n junctions
- Spin battery
- Spin injection
- Spin logic
- Spin polarization
- Spin relaxation
- Spin transistors
- Spin-polarized transport
- Spin-voltaic effect
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