Binding of shallow donor impurities in quantum-well structures

N. C. Jarosik; B. D. McCombe; B. V. Shanabrook; J. Comas; John Ralston; G. Wicks

doi:10.1103/PhysRevLett.54.1283

Binding of shallow donor impurities in quantum-well structures

N. C. Jarosik
, B. D. McCombe
, B. V. Shanabrook
, J. Comas
, John Ralston
, G. Wicks

Physics

SUNY Buffalo
Naval Research Laboratory
Cornell University

Research output: Contribution to journal › Article › peer-review

226 Scopus citations

Abstract

Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in GaAs-AlxGa1-xAs multiple-quantum-well structures. Quantum-well widths between 80 and 450 were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.

Original language	English
Pages (from-to)	1283-1286
Number of pages	4
Journal	Physical Review Letters
Volume	54
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevLett.54.1283
State	Published - 1985

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10.1103/PhysRevLett.54.1283

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title = "Binding of shallow donor impurities in quantum-well structures",

abstract = "Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in GaAs-AlxGa1-xAs multiple-quantum-well structures. Quantum-well widths between 80 and 450 were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.",

author = "Jarosik, \{N. C.\} and McCombe, \{B. D.\} and Shanabrook, \{B. V.\} and J. Comas and John Ralston and G. Wicks",

year = "1985",

doi = "10.1103/PhysRevLett.54.1283",

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journal = "Physical Review Letters",

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T1 - Binding of shallow donor impurities in quantum-well structures

AU - Jarosik, N. C.

AU - McCombe, B. D.

AU - Shanabrook, B. V.

AU - Comas, J.

AU - Ralston, John

AU - Wicks, G.

PY - 1985

Y1 - 1985

N2 - Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in GaAs-AlxGa1-xAs multiple-quantum-well structures. Quantum-well widths between 80 and 450 were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.

AB - Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in GaAs-AlxGa1-xAs multiple-quantum-well structures. Quantum-well widths between 80 and 450 were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.

UR - https://www.scopus.com/pages/publications/8744256552

U2 - 10.1103/PhysRevLett.54.1283

DO - 10.1103/PhysRevLett.54.1283

M3 - Article

AN - SCOPUS:8744256552

SN - 0031-9007

VL - 54

SP - 1283

EP - 1286

JO - Physical Review Letters

JF - Physical Review Letters

IS - 12

ER -

Binding of shallow donor impurities in quantum-well structures

Abstract

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