Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

Ye Jia; Joshua S. Wallace; Yueling Qin; Joseph A. Gardella; Amir M. Dabiran; Uttam Singisetti

doi:10.1007/s11664-015-4175-9

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

Ye Jia
, Joshua S. Wallace
, Yueling Qin
, Joseph A. Gardella
, Amir M. Dabiran
, Uttam Singisetti

SUNY Buffalo
SVT Associates, Inc.

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.

Original language	English
Pages (from-to)	2013-2018
Number of pages	6
Journal	Journal of Electronic Materials
Volume	45
Issue number	4
DOIs	https://doi.org/10.1007/s11664-015-4175-9
State	Published - Apr 1 2016

Keywords

band offset
m-Plane indium nitride
x-ray photoelectron spectroscopy

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10.1007/s11664-015-4175-9

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title = "Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride",

abstract = "In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.",

keywords = "band offset, m-Plane indium nitride, x-ray photoelectron spectroscopy",

author = "Ye Jia and Wallace, \{Joshua S.\} and Yueling Qin and Gardella, \{Joseph A.\} and Dabiran, \{Amir M.\} and Uttam Singisetti",

note = "Publisher Copyright: {\textcopyright} 2015, The Minerals, Metals \& Materials Society.",

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doi = "10.1007/s11664-015-4175-9",

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T1 - Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

AU - Jia, Ye

AU - Wallace, Joshua S.

AU - Qin, Yueling

AU - Gardella, Joseph A.

AU - Dabiran, Amir M.

AU - Singisetti, Uttam

PY - 2016/4/1

Y1 - 2016/4/1

N2 - In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.

AB - In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.

KW - band offset

KW - m-Plane indium nitride

KW - x-ray photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/84961120886

U2 - 10.1007/s11664-015-4175-9

DO - 10.1007/s11664-015-4175-9

M3 - Article

AN - SCOPUS:84961120886

SN - 0361-5235

VL - 45

SP - 2013

EP - 2018

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

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