Application of ordered mesoporous SiO 2 film for low power consumption in phase-change memory

Tae Jung Ha; Hyung Keun Kim; Doo Jin Choi; Sangwoo Shin; Hyung Hee Cho; Ho Won Jang; Seok Jin Yoon; Hyung Ho Park

doi:10.1016/j.micromeso.2012.07.039

Application of ordered mesoporous SiO ₂ film for low power consumption in phase-change memory

Tae Jung Ha
, Hyung Keun Kim
, Doo Jin Choi
, Sangwoo Shin
, Hyung Hee Cho
, Ho Won Jang
, Seok Jin Yoon
, Hyung Ho Park

Department of Mechanical and Aerospace Engineering

Yonsei University
Seoul National University
Korea Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This article presents an application of ordered mesoporous films to phase-change memory (PCM). Though ordered mesoporous SiO ₂ films have attracted attention due to their regular arrangement of nanometer-sized pores, they have not yet become an integral component in any application and have not been produced in a practical manner. Also, even though PCMs are potential next-generation memory devices, they have not made large market due to high power consumption, heat interference, and other shortcomings. In this work, ordered mesoporous SiO ₂ films were applied to an interlayer dielectric in PCM as a thermal insulating layer, resulting in one-quarter lower power consumption in PCM devices through the reduction of the power consumed in the RESET operation.

Original language	English
Pages (from-to)	321-325
Number of pages	5
Journal	Microporous and Mesoporous Materials
Volume	163
DOIs	https://doi.org/10.1016/j.micromeso.2012.07.039
State	Published - Nov 15 2012

Keywords

Low power consumption
Ordered mesoporous film
Phase-change memory
Thermal insulation

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10.1016/j.micromeso.2012.07.039

Cite this

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title = "Application of ordered mesoporous SiO 2 film for low power consumption in phase-change memory",

abstract = "This article presents an application of ordered mesoporous films to phase-change memory (PCM). Though ordered mesoporous SiO 2 films have attracted attention due to their regular arrangement of nanometer-sized pores, they have not yet become an integral component in any application and have not been produced in a practical manner. Also, even though PCMs are potential next-generation memory devices, they have not made large market due to high power consumption, heat interference, and other shortcomings. In this work, ordered mesoporous SiO 2 films were applied to an interlayer dielectric in PCM as a thermal insulating layer, resulting in one-quarter lower power consumption in PCM devices through the reduction of the power consumed in the RESET operation.",

keywords = "Low power consumption, Ordered mesoporous film, Phase-change memory, Thermal insulation",

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doi = "10.1016/j.micromeso.2012.07.039",

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T1 - Application of ordered mesoporous SiO 2 film for low power consumption in phase-change memory

AU - Ha, Tae Jung

AU - Kim, Hyung Keun

AU - Choi, Doo Jin

AU - Shin, Sangwoo

AU - Cho, Hyung Hee

AU - Jang, Ho Won

AU - Yoon, Seok Jin

AU - Park, Hyung Ho

PY - 2012/11/15

Y1 - 2012/11/15

N2 - This article presents an application of ordered mesoporous films to phase-change memory (PCM). Though ordered mesoporous SiO 2 films have attracted attention due to their regular arrangement of nanometer-sized pores, they have not yet become an integral component in any application and have not been produced in a practical manner. Also, even though PCMs are potential next-generation memory devices, they have not made large market due to high power consumption, heat interference, and other shortcomings. In this work, ordered mesoporous SiO 2 films were applied to an interlayer dielectric in PCM as a thermal insulating layer, resulting in one-quarter lower power consumption in PCM devices through the reduction of the power consumed in the RESET operation.

AB - This article presents an application of ordered mesoporous films to phase-change memory (PCM). Though ordered mesoporous SiO 2 films have attracted attention due to their regular arrangement of nanometer-sized pores, they have not yet become an integral component in any application and have not been produced in a practical manner. Also, even though PCMs are potential next-generation memory devices, they have not made large market due to high power consumption, heat interference, and other shortcomings. In this work, ordered mesoporous SiO 2 films were applied to an interlayer dielectric in PCM as a thermal insulating layer, resulting in one-quarter lower power consumption in PCM devices through the reduction of the power consumed in the RESET operation.

KW - Low power consumption

KW - Ordered mesoporous film

KW - Phase-change memory

KW - Thermal insulation

UR - https://www.scopus.com/pages/publications/84864961590

U2 - 10.1016/j.micromeso.2012.07.039

DO - 10.1016/j.micromeso.2012.07.039

M3 - Article

AN - SCOPUS:84864961590

SN - 1387-1811

VL - 163

SP - 321

EP - 325

JO - Microporous and Mesoporous Materials

JF - Microporous and Mesoporous Materials

ER -

Application of ordered mesoporous SiO ₂ film for low power consumption in phase-change memory

Abstract

Keywords

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