Application of narrow band-gap materials in nanoscale spin filters

M. J. Gilbert; J. P. Bird; T. Sugaya; R. Akis

doi:10.1016/S0921-4526(01)01446-6

Application of narrow band-gap materials in nanoscale spin filters

M. J. Gilbert
, J. P. Bird
, T. Sugaya
, R. Akis

Department of Electrical Engineering

Arizona State University
National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We develop a simple analytical model to study the influence of different material systems on the operation of a quantum-point-contact spin filter. Such a device has been predicted to allow for local control of the spin polarization in a semiconductor, and for direct electrical detection of the induced spin polarization. Narrow band-gap semiconductors, such as InAs and InSb, are predicted to exhibit excellent spin-filter characteristics, due to their large g-factor values, and enhanced subband splittings. As a practical step towards the realization of such a spin filter, the electrical properties of InGaAs quantum wires are investigated.

Original language	English
Pages (from-to)	230-234
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01446-6
State	Published - Mar 2002

Keywords

Quantum point contact
Spin filter
Spintronics

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10.1016/S0921-4526(01)01446-6

Cite this

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title = "Application of narrow band-gap materials in nanoscale spin filters",

abstract = "We develop a simple analytical model to study the influence of different material systems on the operation of a quantum-point-contact spin filter. Such a device has been predicted to allow for local control of the spin polarization in a semiconductor, and for direct electrical detection of the induced spin polarization. Narrow band-gap semiconductors, such as InAs and InSb, are predicted to exhibit excellent spin-filter characteristics, due to their large g-factor values, and enhanced subband splittings. As a practical step towards the realization of such a spin filter, the electrical properties of InGaAs quantum wires are investigated.",

keywords = "Quantum point contact, Spin filter, Spintronics",

author = "Gilbert, \{M. J.\} and Bird, \{J. P.\} and T. Sugaya and R. Akis",

year = "2002",

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journal = "Physica B: Condensed Matter",

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TY - JOUR

T1 - Application of narrow band-gap materials in nanoscale spin filters

AU - Gilbert, M. J.

AU - Bird, J. P.

AU - Sugaya, T.

AU - Akis, R.

PY - 2002/3

Y1 - 2002/3

N2 - We develop a simple analytical model to study the influence of different material systems on the operation of a quantum-point-contact spin filter. Such a device has been predicted to allow for local control of the spin polarization in a semiconductor, and for direct electrical detection of the induced spin polarization. Narrow band-gap semiconductors, such as InAs and InSb, are predicted to exhibit excellent spin-filter characteristics, due to their large g-factor values, and enhanced subband splittings. As a practical step towards the realization of such a spin filter, the electrical properties of InGaAs quantum wires are investigated.

AB - We develop a simple analytical model to study the influence of different material systems on the operation of a quantum-point-contact spin filter. Such a device has been predicted to allow for local control of the spin polarization in a semiconductor, and for direct electrical detection of the induced spin polarization. Narrow band-gap semiconductors, such as InAs and InSb, are predicted to exhibit excellent spin-filter characteristics, due to their large g-factor values, and enhanced subband splittings. As a practical step towards the realization of such a spin filter, the electrical properties of InGaAs quantum wires are investigated.

KW - Quantum point contact

KW - Spin filter

KW - Spintronics

UR - https://www.scopus.com/pages/publications/0036504025

U2 - 10.1016/S0921-4526(01)01446-6

DO - 10.1016/S0921-4526(01)01446-6

M3 - Article

AN - SCOPUS:0036504025

SN - 0921-4526

VL - 314

SP - 230

EP - 234

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Application of narrow band-gap materials in nanoscale spin filters

Abstract

Keywords

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