Anomalous output conductance in N-polar GaN-based MIS-HEMTs

Man Hoi Wong; Uttam Singisetti; Jing Lu; James S. Speck; Umesh K. Mishra

doi:10.1109/DRC.2011.5994502

Anomalous output conductance in N-polar GaN-based MIS-HEMTs

Man Hoi Wong
, Uttam Singisetti
, Jing Lu
, James S. Speck
, Umesh K. Mishra

Department of Electrical Engineering

University of California at Santa Barbara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We propose that the anomalous output conductance in N-polar GaN MIS-HEMTs was caused by ionization of donor-like traps from a net negative polarization interface. It is a low-frequency phenomenon that changes the V_T of the device with V_D, while no evidence of increased output conductance or related device performance degradation was found under RF conditions. Appropriate back-barrier designs are needed to mitigate the DC-G_DS in N-polar GaN MIS-HEMTs.

Original language	English
Title of host publication	69th Device Research Conference, DRC 2011 - Conference Digest
Pages	211-212
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2011.5994502
State	Published - 2011
Event	69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States Duration: Jun 20 2011 → Jun 22 2011

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	69th Device Research Conference, DRC 2011
Country/Territory	United States
City	Santa Barbara, CA
Period	06/20/11 → 06/22/11

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10.1109/DRC.2011.5994502

Cite this

@inproceedings{f0125443e05e4a268d05b2a99e87c423,

title = "Anomalous output conductance in N-polar GaN-based MIS-HEMTs",

abstract = "We propose that the anomalous output conductance in N-polar GaN MIS-HEMTs was caused by ionization of donor-like traps from a net negative polarization interface. It is a low-frequency phenomenon that changes the VT of the device with VD, while no evidence of increased output conductance or related device performance degradation was found under RF conditions. Appropriate back-barrier designs are needed to mitigate the DC-GDS in N-polar GaN MIS-HEMTs.",

author = "Wong, \{Man Hoi\} and Uttam Singisetti and Jing Lu and Speck, \{James S.\} and Mishra, \{Umesh K.\}",

year = "2011",

doi = "10.1109/DRC.2011.5994502",

language = "English",

isbn = "9781612842417",

series = "Device Research Conference - Conference Digest, DRC",

pages = "211--212",

booktitle = "69th Device Research Conference, DRC 2011 - Conference Digest",

note = "69th Device Research Conference, DRC 2011 ; Conference date: 20-06-2011 Through 22-06-2011",

}

Wong, MH, Singisetti, U, Lu, J, Speck, JS & Mishra, UK 2011, Anomalous output conductance in N-polar GaN-based MIS-HEMTs. in 69th Device Research Conference, DRC 2011 - Conference Digest., 5994502, Device Research Conference - Conference Digest, DRC, pp. 211-212, 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 06/20/11. https://doi.org/10.1109/DRC.2011.5994502

TY - GEN

T1 - Anomalous output conductance in N-polar GaN-based MIS-HEMTs

AU - Wong, Man Hoi

AU - Singisetti, Uttam

AU - Lu, Jing

AU - Speck, James S.

AU - Mishra, Umesh K.

PY - 2011

Y1 - 2011

N2 - We propose that the anomalous output conductance in N-polar GaN MIS-HEMTs was caused by ionization of donor-like traps from a net negative polarization interface. It is a low-frequency phenomenon that changes the VT of the device with VD, while no evidence of increased output conductance or related device performance degradation was found under RF conditions. Appropriate back-barrier designs are needed to mitigate the DC-GDS in N-polar GaN MIS-HEMTs.

AB - We propose that the anomalous output conductance in N-polar GaN MIS-HEMTs was caused by ionization of donor-like traps from a net negative polarization interface. It is a low-frequency phenomenon that changes the VT of the device with VD, while no evidence of increased output conductance or related device performance degradation was found under RF conditions. Appropriate back-barrier designs are needed to mitigate the DC-GDS in N-polar GaN MIS-HEMTs.

UR - https://www.scopus.com/pages/publications/84655165935

U2 - 10.1109/DRC.2011.5994502

DO - 10.1109/DRC.2011.5994502

M3 - Conference contribution

AN - SCOPUS:84655165935

SN - 9781612842417

T3 - Device Research Conference - Conference Digest, DRC

SP - 211

EP - 212

BT - 69th Device Research Conference, DRC 2011 - Conference Digest

T2 - 69th Device Research Conference, DRC 2011

Y2 - 20 June 2011 through 22 June 2011

ER -

Anomalous output conductance in N-polar GaN-based MIS-HEMTs

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