ANOMALOUS HALL EFFECT IN A MANY-VALLEY SEMICONDUCTOR UNDER MULTIVALUED SASAKI EFFECT CONDITIONS.

When a many-valley n-type semiconductor is subjected to a heating electric field, which gives rise to the multivalued Sasaki effect, and to a weak transverse magnetic field, the latter displaces the domain wall separating regions with different directions of the transverse (anisotropic) electric Sasaki field. This displacement gives rise to an additional ″anomalous″ Hall emf, which is superimposed on the ″normal″ emf. The effect disappears when the domain wall is displaced to one of the surfaces of the sample. In addition to the displacement of a wall in the direction producing the anomalous emf of the correct (electron) sign, it is possible, in principle, to have a situation in which the wall displacement is opposite so that the anomalous emf (and the total Hall emf) has the incorrect (i. e. , hole) sign.