Anomalies in the pressure response of the Raman modes in (211)-oriented InxGa1-xAs/GaAs strained-layer superlattices

V. Lemos; T. Ritter; B. A. Weinstein

doi:10.1063/1.107556

Anomalies in the pressure response of the Raman modes in (211)-oriented In_xGa_1-xAs/GaAs strained-layer superlattices

V. Lemos
, T. Ritter
, B. A. Weinstein

Physics

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The phonon spectra of In_xGa_1-xAs/GaAs strained-layer superlattices grown on (100), or either one of the two inequivalent (211)A and B surfaces of GaAs were obtained by Raman scattering for pressures ranging from 1 atm to 13.0 GPa. The measurements show that phonon frequencies are discontinuous functions of pressure for (211)A superlattices in contrast to the continuous behavior observed for (100) and (211)B-oriented superlattices. These discontinuities are discussed in terms of pressure induced increase in the density of heterointerface dislocations.

Original language	English
Pages (from-to)	1417-1419
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	12
DOIs	https://doi.org/10.1063/1.107556
State	Published - 1992

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title = "Anomalies in the pressure response of the Raman modes in (211)-oriented InxGa1-xAs/GaAs strained-layer superlattices",

abstract = "The phonon spectra of InxGa1-xAs/GaAs strained-layer superlattices grown on (100), or either one of the two inequivalent (211)A and B surfaces of GaAs were obtained by Raman scattering for pressures ranging from 1 atm to 13.0 GPa. The measurements show that phonon frequencies are discontinuous functions of pressure for (211)A superlattices in contrast to the continuous behavior observed for (100) and (211)B-oriented superlattices. These discontinuities are discussed in terms of pressure induced increase in the density of heterointerface dislocations.",

author = "V. Lemos and T. Ritter and Weinstein, \{B. A.\}",

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doi = "10.1063/1.107556",

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AU - Lemos, V.

AU - Ritter, T.

AU - Weinstein, B. A.

PY - 1992

Y1 - 1992

N2 - The phonon spectra of InxGa1-xAs/GaAs strained-layer superlattices grown on (100), or either one of the two inequivalent (211)A and B surfaces of GaAs were obtained by Raman scattering for pressures ranging from 1 atm to 13.0 GPa. The measurements show that phonon frequencies are discontinuous functions of pressure for (211)A superlattices in contrast to the continuous behavior observed for (100) and (211)B-oriented superlattices. These discontinuities are discussed in terms of pressure induced increase in the density of heterointerface dislocations.

AB - The phonon spectra of InxGa1-xAs/GaAs strained-layer superlattices grown on (100), or either one of the two inequivalent (211)A and B surfaces of GaAs were obtained by Raman scattering for pressures ranging from 1 atm to 13.0 GPa. The measurements show that phonon frequencies are discontinuous functions of pressure for (211)A superlattices in contrast to the continuous behavior observed for (100) and (211)B-oriented superlattices. These discontinuities are discussed in terms of pressure induced increase in the density of heterointerface dislocations.

UR - https://www.scopus.com/pages/publications/5944225167

U2 - 10.1063/1.107556

DO - 10.1063/1.107556

M3 - Article

AN - SCOPUS:5944225167

SN - 0003-6951

VL - 61

SP - 1417

EP - 1419

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Anomalies in the pressure response of the Raman modes in (211)-oriented In_xGa_1-xAs/GaAs strained-layer superlattices

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