Annealing effects on the polarity of stored charge of BaTiO3 films on Si

L. H. Chang; W. A. Anderson

Annealing effects on the polarity of stored charge of BaTiO₃ films on Si

L. H. Chang
, W. A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to conference › Paper › peer-review

Abstract

A high quality BaTiO₃/p-Si interface was achieved at substrate temperature of 500°C by using RF magnetron sputtering. In-situ annealing at the same temperature was carried out to study the charge behavior of BaTiO₃ films on Si substrate. Depending on the annealing oxygen pressure and annealing condition, both polarities of effective oxide charge in the metal-ferroelectric-semiconductor, Au/ BaTiO₃/p-Si, structure was observed. It is believed that the density of electronic states, generated at the interface due to the asymmetry of the structure between BaTiO₃ and Si substrate, and the positive oxide charges, depending on the degree of the metal-oxygen reaction for different annealing oxygen pressures and annealing durations, determine the behavior of oxide charge.

Original language	English
Pages	482-484
Number of pages	3
State	Published - 1994
Event	Proceedings of the 1994 9th IEEE International Symposium on Applications of Ferroelectrics - University Park, PA, USA Duration: Aug 7 1994 → Aug 10 1994

Conference

Conference	Proceedings of the 1994 9th IEEE International Symposium on Applications of Ferroelectrics
City	University Park, PA, USA
Period	08/7/94 → 08/10/94

Cite this

@conference{37b83242382f4ee58a80d3e2b0d0637b,

title = "Annealing effects on the polarity of stored charge of BaTiO3 films on Si",

abstract = "A high quality BaTiO3/p-Si interface was achieved at substrate temperature of 500°C by using RF magnetron sputtering. In-situ annealing at the same temperature was carried out to study the charge behavior of BaTiO3 films on Si substrate. Depending on the annealing oxygen pressure and annealing condition, both polarities of effective oxide charge in the metal-ferroelectric-semiconductor, Au/ BaTiO3/p-Si, structure was observed. It is believed that the density of electronic states, generated at the interface due to the asymmetry of the structure between BaTiO3 and Si substrate, and the positive oxide charges, depending on the degree of the metal-oxygen reaction for different annealing oxygen pressures and annealing durations, determine the behavior of oxide charge.",

author = "Chang, \{L. H.\} and Anderson, \{W. A.\}",

year = "1994",

language = "English",

pages = "482--484",

note = "Proceedings of the 1994 9th IEEE International Symposium on Applications of Ferroelectrics ; Conference date: 07-08-1994 Through 10-08-1994",

}

TY - CONF

T1 - Annealing effects on the polarity of stored charge of BaTiO3 films on Si

AU - Chang, L. H.

AU - Anderson, W. A.

PY - 1994

Y1 - 1994

N2 - A high quality BaTiO3/p-Si interface was achieved at substrate temperature of 500°C by using RF magnetron sputtering. In-situ annealing at the same temperature was carried out to study the charge behavior of BaTiO3 films on Si substrate. Depending on the annealing oxygen pressure and annealing condition, both polarities of effective oxide charge in the metal-ferroelectric-semiconductor, Au/ BaTiO3/p-Si, structure was observed. It is believed that the density of electronic states, generated at the interface due to the asymmetry of the structure between BaTiO3 and Si substrate, and the positive oxide charges, depending on the degree of the metal-oxygen reaction for different annealing oxygen pressures and annealing durations, determine the behavior of oxide charge.

AB - A high quality BaTiO3/p-Si interface was achieved at substrate temperature of 500°C by using RF magnetron sputtering. In-situ annealing at the same temperature was carried out to study the charge behavior of BaTiO3 films on Si substrate. Depending on the annealing oxygen pressure and annealing condition, both polarities of effective oxide charge in the metal-ferroelectric-semiconductor, Au/ BaTiO3/p-Si, structure was observed. It is believed that the density of electronic states, generated at the interface due to the asymmetry of the structure between BaTiO3 and Si substrate, and the positive oxide charges, depending on the degree of the metal-oxygen reaction for different annealing oxygen pressures and annealing durations, determine the behavior of oxide charge.

UR - https://www.scopus.com/pages/publications/0028721556

M3 - Paper

AN - SCOPUS:0028721556

SP - 482

EP - 484

T2 - Proceedings of the 1994 9th IEEE International Symposium on Applications of Ferroelectrics

Y2 - 7 August 1994 through 10 August 1994

ER -

Annealing effects on the polarity of stored charge of BaTiO₃ films on Si

Abstract

Conference

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