Annealing effects and Te mixing in CdTe/CdS heterojunctions

Y. L. Soo; S. Huang; Y. H. Kao; A. D. Compaan

doi:10.1063/1.123298

Annealing effects and Te mixing in CdTe/CdS heterojunctions

Y. L. Soo
, S. Huang
, Y. H. Kao
, A. D. Compaan

Physics

SUNY Buffalo
University of Toledo

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Angular dependence of x-ray fluorescence techniques have been employed to investigate the effects of thermal annealing at various temperatures ranging from 340 to 387°C on a series of CdTe/CdS heterojunctions. Changes in depth profiles of Te and Cd atoms in the CdS layer as a result of heat treatment has been observed. A simple model is proposed for comparison of the ratio of Te K α to Cd K α fluorescence yield at different annealing temperatures. Our results suggest that the concentration of migrated Te atoms in the CdS layer increases with the annealing temperature, and the Te/Cd ratio in the CdS layer could even become greater than that in CdTe with annealing temperatures higher than 370°C.

Original language	English
Pages (from-to)	218-220
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	2
DOIs	https://doi.org/10.1063/1.123298
State	Published - Jan 11 1999

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10.1063/1.123298

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title = "Annealing effects and Te mixing in CdTe/CdS heterojunctions",

abstract = "Angular dependence of x-ray fluorescence techniques have been employed to investigate the effects of thermal annealing at various temperatures ranging from 340 to 387°C on a series of CdTe/CdS heterojunctions. Changes in depth profiles of Te and Cd atoms in the CdS layer as a result of heat treatment has been observed. A simple model is proposed for comparison of the ratio of Te K α to Cd K α fluorescence yield at different annealing temperatures. Our results suggest that the concentration of migrated Te atoms in the CdS layer increases with the annealing temperature, and the Te/Cd ratio in the CdS layer could even become greater than that in CdTe with annealing temperatures higher than 370°C.",

author = "Soo, \{Y. L.\} and S. Huang and Kao, \{Y. H.\} and Compaan, \{A. D.\}",

year = "1999",

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doi = "10.1063/1.123298",

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journal = "Applied Physics Letters",

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T1 - Annealing effects and Te mixing in CdTe/CdS heterojunctions

AU - Soo, Y. L.

AU - Huang, S.

AU - Kao, Y. H.

AU - Compaan, A. D.

PY - 1999/1/11

Y1 - 1999/1/11

N2 - Angular dependence of x-ray fluorescence techniques have been employed to investigate the effects of thermal annealing at various temperatures ranging from 340 to 387°C on a series of CdTe/CdS heterojunctions. Changes in depth profiles of Te and Cd atoms in the CdS layer as a result of heat treatment has been observed. A simple model is proposed for comparison of the ratio of Te K α to Cd K α fluorescence yield at different annealing temperatures. Our results suggest that the concentration of migrated Te atoms in the CdS layer increases with the annealing temperature, and the Te/Cd ratio in the CdS layer could even become greater than that in CdTe with annealing temperatures higher than 370°C.

AB - Angular dependence of x-ray fluorescence techniques have been employed to investigate the effects of thermal annealing at various temperatures ranging from 340 to 387°C on a series of CdTe/CdS heterojunctions. Changes in depth profiles of Te and Cd atoms in the CdS layer as a result of heat treatment has been observed. A simple model is proposed for comparison of the ratio of Te K α to Cd K α fluorescence yield at different annealing temperatures. Our results suggest that the concentration of migrated Te atoms in the CdS layer increases with the annealing temperature, and the Te/Cd ratio in the CdS layer could even become greater than that in CdTe with annealing temperatures higher than 370°C.

UR - https://www.scopus.com/pages/publications/0003087101

U2 - 10.1063/1.123298

DO - 10.1063/1.123298

M3 - Article

AN - SCOPUS:0003087101

SN - 0003-6951

VL - 74

SP - 218

EP - 220

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Annealing effects and Te mixing in CdTe/CdS heterojunctions

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