Anisotropic in-plane strains and dielectric properties in (Pb,Sr)TiO 3 thin films on NdGaO 3 substrates

Y. Lin; X. Chen; S. W. Liu; C. L. Chen; Jang Sik Lee; Y. Li; Q. X. Jia; A. Bhalla

doi:10.1063/1.1643546

Anisotropic in-plane strains and dielectric properties in (Pb,Sr)TiO ₃ thin films on NdGaO ₃ substrates

Y. Lin
, X. Chen
, S. W. Liu
, C. L. Chen
, Jang Sik Lee
, Y. Li
, Q. X. Jia
, A. Bhalla

Department of Materials Design and Innovation

Los Alamos National Laboratory
University of Houston
Texas A&M University
Pennsylvania State University

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

An anisotropic in-plane strain was induced in (Pb,Sr)TiO ₃ (PST) thin film on an orthorhombic NdGaO ₃ (NGO) substrate by epitaxial growth of the film. The strain of the PST thin film was measured using high-resolution x-ray diffraction. An orthorhombic NGO substrate, with the strain 485 ppm along the [100] direction and 26 ppm along the [010] direction, respectively, was shown by the film. The significant differences in both the dielectric constant and the tunability were observed between these two directions.

Original language	English
Pages (from-to)	577-579
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	4
DOIs	https://doi.org/10.1063/1.1643546
State	Published - Jan 26 2004

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title = "Anisotropic in-plane strains and dielectric properties in (Pb,Sr)TiO 3 thin films on NdGaO 3 substrates",

abstract = "An anisotropic in-plane strain was induced in (Pb,Sr)TiO 3 (PST) thin film on an orthorhombic NdGaO 3 (NGO) substrate by epitaxial growth of the film. The strain of the PST thin film was measured using high-resolution x-ray diffraction. An orthorhombic NGO substrate, with the strain 485 ppm along the [100] direction and 26 ppm along the [010] direction, respectively, was shown by the film. The significant differences in both the dielectric constant and the tunability were observed between these two directions.",

author = "Y. Lin and X. Chen and Liu, \{S. W.\} and Chen, \{C. L.\} and Lee, \{Jang Sik\} and Y. Li and Jia, \{Q. X.\} and A. Bhalla",

year = "2004",

month = jan,

day = "26",

doi = "10.1063/1.1643546",

language = "English",

volume = "84",

pages = "577--579",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Anisotropic in-plane strains and dielectric properties in (Pb,Sr)TiO 3 thin films on NdGaO 3 substrates

AU - Lin, Y.

AU - Chen, X.

AU - Liu, S. W.

AU - Chen, C. L.

AU - Lee, Jang Sik

AU - Li, Y.

AU - Jia, Q. X.

AU - Bhalla, A.

PY - 2004/1/26

Y1 - 2004/1/26

N2 - An anisotropic in-plane strain was induced in (Pb,Sr)TiO 3 (PST) thin film on an orthorhombic NdGaO 3 (NGO) substrate by epitaxial growth of the film. The strain of the PST thin film was measured using high-resolution x-ray diffraction. An orthorhombic NGO substrate, with the strain 485 ppm along the [100] direction and 26 ppm along the [010] direction, respectively, was shown by the film. The significant differences in both the dielectric constant and the tunability were observed between these two directions.

AB - An anisotropic in-plane strain was induced in (Pb,Sr)TiO 3 (PST) thin film on an orthorhombic NdGaO 3 (NGO) substrate by epitaxial growth of the film. The strain of the PST thin film was measured using high-resolution x-ray diffraction. An orthorhombic NGO substrate, with the strain 485 ppm along the [100] direction and 26 ppm along the [010] direction, respectively, was shown by the film. The significant differences in both the dielectric constant and the tunability were observed between these two directions.

UR - https://www.scopus.com/pages/publications/1242285018

U2 - 10.1063/1.1643546

DO - 10.1063/1.1643546

M3 - Article

AN - SCOPUS:1242285018

SN - 0003-6951

VL - 84

SP - 577

EP - 579

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Anisotropic in-plane strains and dielectric properties in (Pb,Sr)TiO ₃ thin films on NdGaO ₃ substrates

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