Anisotropic dielectric properties in epitaxial Bi 3.25La 0.75Ti 3O 12 thin films along different crystal directions

Jang Sik Lee; B. S. Kang; Y. Lin; Y. Li; Q. X. Jia

doi:10.1063/1.1797536

Anisotropic dielectric properties in epitaxial Bi _3.25La _0.75Ti ₃O ₁₂ thin films along different crystal directions

Jang Sik Lee
, B. S. Kang
, Y. Lin
, Y. Li
, Q. X. Jia

Department of Materials Design and Innovation

Los Alamos National Laboratory Materials Science and Technology Division

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The dielectric properties of the epitaxial (001)-oriented Bi _3.25La _0.75Ti ₃O ₁₂ (BLT) thin films were investigated. The sample films were grown using pulsed-laser deposition on single-crystal substrates. X-ray diffraction was used to analyze the crystal structures of the films. It was observed that the dielectric properties of the BLT films were highly anisotropic along different crystal directions. The dielectric constants of the films were found to be 358 and 160 along [100] and [11 ^̄0], respectively.

Original language	English
Pages (from-to)	2586-2588
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	13
DOIs	https://doi.org/10.1063/1.1797536
State	Published - Sep 27 2004

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title = "Anisotropic dielectric properties in epitaxial Bi 3.25La 0.75Ti 3O 12 thin films along different crystal directions",

abstract = "The dielectric properties of the epitaxial (001)-oriented Bi 3.25La 0.75Ti 3O 12 (BLT) thin films were investigated. The sample films were grown using pulsed-laser deposition on single-crystal substrates. X-ray diffraction was used to analyze the crystal structures of the films. It was observed that the dielectric properties of the BLT films were highly anisotropic along different crystal directions. The dielectric constants of the films were found to be 358 and 160 along [100] and [11{\= }0], respectively.",

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AU - Lee, Jang Sik

AU - Kang, B. S.

AU - Lin, Y.

AU - Li, Y.

AU - Jia, Q. X.

PY - 2004/9/27

Y1 - 2004/9/27

N2 - The dielectric properties of the epitaxial (001)-oriented Bi 3.25La 0.75Ti 3O 12 (BLT) thin films were investigated. The sample films were grown using pulsed-laser deposition on single-crystal substrates. X-ray diffraction was used to analyze the crystal structures of the films. It was observed that the dielectric properties of the BLT films were highly anisotropic along different crystal directions. The dielectric constants of the films were found to be 358 and 160 along [100] and [11 ̄0], respectively.

AB - The dielectric properties of the epitaxial (001)-oriented Bi 3.25La 0.75Ti 3O 12 (BLT) thin films were investigated. The sample films were grown using pulsed-laser deposition on single-crystal substrates. X-ray diffraction was used to analyze the crystal structures of the films. It was observed that the dielectric properties of the BLT films were highly anisotropic along different crystal directions. The dielectric constants of the films were found to be 358 and 160 along [100] and [11 ̄0], respectively.

UR - https://www.scopus.com/pages/publications/7544247826

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DO - 10.1063/1.1797536

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Anisotropic dielectric properties in epitaxial Bi _3.25La _0.75Ti ₃O ₁₂ thin films along different crystal directions

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