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Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations

  • Rui Zhang
  • , Taizhi Liu
  • , Kexin Yang
  • , Linda Milor
  • Georgia Institute of Technology

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Time dependent dielectric breakdown degrades the reliability of SRAM cache. A novel methodology to estimate SRAM cache reliability and performance is presented. The performance and reliability characteristics are obtained from activity extraction and Monte Carlo simulations, considering device dimensions, process variations, the stress probability, and the thermal distribution. Based on the reliability-performance estimation methodology, caches with various settings on associativity, cache line size, and cache size are analysed and compared. Experiments show that there exists a contradiction between performance and reliability for different cache configurations. Understanding the variation of performance and reliability can provide SRAM designers with insight on reliability-performance trade-offs for cache system design.

Original languageEnglish
Pages (from-to)87-91
Number of pages5
JournalMicroelectronics Reliability
Volume76-77
DOIs
StatePublished - Sep 2017

Keywords

  • Configuration
  • Monte Carlo simulation
  • Performance
  • Reliability
  • SRAM
  • Time dependent dielectric breakdown (TDDB)

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