Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

A. T. Hanbicki; O. M.J. Van't Erve; R. Magno; G. Kioseoglou; C. H. Li; B. T. Jonker; G. Itskos; R. Mallory; M. Yasar; A. Petrou

doi:10.1063/1.1580631

Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

A. T. Hanbicki
, O. M.J. Van't Erve
, R. Magno
, G. Kioseoglou
, C. H. Li
, B. T. Jonker
, G. Itskos
, R. Mallory
, M. Yasar
, A. Petrou

Physics

Naval Research Laboratory
SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

352 Scopus citations

Abstract

Electrical injection through a reverse biased Fe/AlGaAs Schottky contact was used to obtain electron-spin polarizations in a GaAs quantum well. The analysis of the transport data using the Rowell criteria shows that single-step tunneling is the dominant transport mechanism. The current-voltage data show a zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like LO phonon modes of the AlGaAs barrier.

Original language	English
Pages (from-to)	4092-4094
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	23
DOIs	https://doi.org/10.1063/1.1580631
State	Published - Jun 9 2003

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10.1063/1.1580631

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abstract = "Electrical injection through a reverse biased Fe/AlGaAs Schottky contact was used to obtain electron-spin polarizations in a GaAs quantum well. The analysis of the transport data using the Rowell criteria shows that single-step tunneling is the dominant transport mechanism. The current-voltage data show a zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like LO phonon modes of the AlGaAs barrier.",

author = "Hanbicki, \{A. T.\} and \{Van't Erve\}, \{O. M.J.\} and R. Magno and G. Kioseoglou and Li, \{C. H.\} and Jonker, \{B. T.\} and G. Itskos and R. Mallory and M. Yasar and A. Petrou",

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T1 - Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

AU - Hanbicki, A. T.

AU - Van't Erve, O. M.J.

AU - Magno, R.

AU - Kioseoglou, G.

AU - Li, C. H.

AU - Jonker, B. T.

AU - Itskos, G.

AU - Mallory, R.

AU - Yasar, M.

AU - Petrou, A.

PY - 2003/6/9

Y1 - 2003/6/9

N2 - Electrical injection through a reverse biased Fe/AlGaAs Schottky contact was used to obtain electron-spin polarizations in a GaAs quantum well. The analysis of the transport data using the Rowell criteria shows that single-step tunneling is the dominant transport mechanism. The current-voltage data show a zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like LO phonon modes of the AlGaAs barrier.

AB - Electrical injection through a reverse biased Fe/AlGaAs Schottky contact was used to obtain electron-spin polarizations in a GaAs quantum well. The analysis of the transport data using the Rowell criteria shows that single-step tunneling is the dominant transport mechanism. The current-voltage data show a zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like LO phonon modes of the AlGaAs barrier.

UR - https://www.scopus.com/pages/publications/0038505239

U2 - 10.1063/1.1580631

DO - 10.1063/1.1580631

M3 - Article

AN - SCOPUS:0038505239

SN - 0003-6951

VL - 82

SP - 4092

EP - 4094

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

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