Abstract
Silicon-oxide-silicon stacks are analyzed medium-energy ion scattering (MEIS) which measures the nitrogen and oxygen concentration profiles through the gate dielectric stack. The stacks uses an electron-cyclotron resonance (ECR) plasma source which were formed by using an ECR chemical vapor deposition technique to deposit nitride films on silicon substrate oxidized with nitrogen oxide using an ECR plasma.
| Original language | English |
|---|---|
| Pages (from-to) | 2503-2506 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 18 |
| Issue number | 5 |
| DOIs | |
| State | Published - Sep 2000 |
| Event | 47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing - Boston, USA Duration: Oct 2 2000 → Oct 6 2000 |
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