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Analysis of silicon-oxide-silicon nitride stacks by medium-energy ion scattering

  • D. Landheer
  • , P. Ma
  • , W. N. Lennard
  • , I. V. Mitchell
  • , C. McNorgan
    • National Research Council of Canada
    • Western University

    Research output: Contribution to journalConference articlepeer-review

    4 Scopus citations

    Abstract

    Silicon-oxide-silicon stacks are analyzed medium-energy ion scattering (MEIS) which measures the nitrogen and oxygen concentration profiles through the gate dielectric stack. The stacks uses an electron-cyclotron resonance (ECR) plasma source which were formed by using an ECR chemical vapor deposition technique to deposit nitride films on silicon substrate oxidized with nitrogen oxide using an ECR plasma.

    Original languageEnglish
    Pages (from-to)2503-2506
    Number of pages4
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume18
    Issue number5
    DOIs
    StatePublished - Sep 2000
    Event47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing - Boston, USA
    Duration: Oct 2 2000Oct 6 2000

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