Abstract
An in situ transmission electron microscopy study of the amorphous-to-crystalline transformation of Al2O3 films on a silicon substrate has been carried out. It is found that a critical electron-beam dose rate is required for the transformation to be observed. The possible effect of the silicon substrate on the growth of the Al 2O3 crystallites is also discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 5272-5273 |
| Number of pages | 2 |
| Journal | Journal of Applied Physics |
| Volume | 73 |
| Issue number | 10 |
| DOIs | |
| State | Published - 1993 |
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