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An in-situ study of copper electropolishing in phosphoric acid solution

  • Deyu Li
  • , Ning Li
  • , Guofeng Xia
  • , Zhen Zheng
  • , Jialin Wang
  • , Ning Xiao
  • , Wenjie Zhai
  • , Gang Wu
  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

In this work, the interface film in the Cu/H3PO4 interface was in-situ studied by tracking the time and potential evolution of the system impedance (Rs) at high-frequency. The fluctuation of Rs upon the applied potentials was confirmed by the Rs-potential plot. A copper oxide film was found formed on the copper surface during the electropolishing process by analyzing the Mott-Schottky curve. Moreover, the copper oxides film exhibited a transition of n-type semiconductor to a p-type one.

Original languageEnglish
Pages (from-to)1041-1046
Number of pages6
JournalInternational Journal of Electrochemical Science
Volume8
Issue number1
DOIs
StatePublished - Jan 2013

Keywords

  • Copper
  • ECMP
  • Electrochemical analysis
  • Electrolytic polishing
  • Planarization
  • Surface chemistry

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