Abstract
In this work, the interface film in the Cu/H3PO4 interface was in-situ studied by tracking the time and potential evolution of the system impedance (Rs) at high-frequency. The fluctuation of Rs upon the applied potentials was confirmed by the Rs-potential plot. A copper oxide film was found formed on the copper surface during the electropolishing process by analyzing the Mott-Schottky curve. Moreover, the copper oxides film exhibited a transition of n-type semiconductor to a p-type one.
| Original language | English |
|---|---|
| Pages (from-to) | 1041-1046 |
| Number of pages | 6 |
| Journal | International Journal of Electrochemical Science |
| Volume | 8 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2013 |
Keywords
- Copper
- ECMP
- Electrochemical analysis
- Electrolytic polishing
- Planarization
- Surface chemistry
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