Amorphous thin film ruthenium oxide as an electrode material for electrochemical capacitors

Ruthenium oxide thin films of an amorphous phase were successfully prepared on a titanium (Ti) substrate at temperatures below 160°C. The sol-gel process using metal alkoxide precursor in nonaqueous solvents was used to prepare these films. The preliminary results showed that a specific capacitance of 430 F/g can be achieved for amorphous ruthenium oxide electrode in sulfuric acid. Films prepared by this method are compared with the films prepared by the thermal decomposition of the aqueous ruthenium chloride solution at temperatures above 300°C. The specific capacitance, the crystalline structure, and the surface morphology of these films as a function of the preparation temperature were also discussed.