@inproceedings{6242581d60c44dd0a8c7048be2c48de7,
title = "Amorphous and micro-crystalline silicon for photovoltaic application",
abstract = "We have investigated the influence of anneal treatment on hydrogenated amorphous silicon films. The a-Si:H was deposited on metal substrates. Structures investigated were i/n+/Mo, n/ n+/Mo, p/p+/Mo, and PIN/N+/S.S. Dark and light I-V studies show an improvement in short circuit current and open circuit voltage with a low temperature anneal (200-300°C). Raman scattering spectroscopy examination showed that a microcrystallization initiated even at a low temperature of 600°C. We find that anneal time has only a small effect on crystallization but that the anneal temperature has a critical effect. The microcrystalline silicon exhibited improved photo response after r.f. plasma hydrogen passivation of grain boundaries.",
author = "J. Yi and R. Wallace and J. Palmer and Anderson, \{W. A.\}",
year = "1993",
language = "English",
isbn = "0780312201",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Publ by IEEE",
pages = "977--980",
editor = "Anon",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",
note = "Proceedings of the 23rd IEEE Photovoltaic Specialists Conference ; Conference date: 10-05-1993 Through 14-05-1993",
}