Aluminum-based high-temperature (>200°C) Sj packaging for SiC power converters

This paper describes the development of a comprehensive packaging approach for high-power, high-temperature power electronic systems, which utilize Silicon Carbide (SiC) transistors. The approach is aluminum-based using an aluminum conductor, aluminum nitride (AlN) substrate and an aluminum-silicon-carbide (AlSiC) combination to minimize dissimilar metal interfaces. A cast process is able to pattern and capture the AlN into the AlSiC net-shape structure. Other techniques for selective electrical isolation and device mounting are discussed. The resulting multi- chip power module allows the SiC transistors to operate up to 350°C while keeping the gate drive below 250°C. Six modules are interconnected in a frame to provide a processed power density of >70W/cu.cm. (>70W/cu.in.) with forced air-cooling in a 150°C ambient, and 19kW/kg with 97% efficient converter.