Skip to main navigation Skip to search Skip to main content

Al/Au and Cu/Au bilayer-metal contacts to YBa2Cu 3O7-x thin films

  • Q. Y. Ma
  • , M. T. Schmidt
  • , E. S. Yang
  • , Siu Wai Chan
  • , D. Bhattachayra
  • , J. P. Zheng
  • , H. S. Kwok
  • Columbia University
  • SUNY Buffalo

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Electrical contact resistivities of both Al and Cu single layer contacts as well as Cu/Au and Al/Au bilayer metal contacts to YBa2Cu 3O7-x (YBCO) thin film have been studied. It was found that aluminum and copper make poor electrical contacts to YBCO due to interface reactions. These contacts have large contact resistivity (10-1-1 Ω cm2), orders of magnitude higher than that of a gold/YBCO contact (10-6 Ω cm2). When an ultrathin Au interlayer (10-30 Å) was inserted between an Al or Cu overlayer and a YBCO film, interface reaction was greatly reduced. The contact resistivities of Al/Au and Cu/Au bilayer-metal contacts dropped by five orders of magnitude when Au interlayer thickness was increased from 0 to 10 Å. With the gold interlayer thickness of 15 Å, the Al/Au and Cu/Au bilayer-metal contacts reached a minimum contact resistivity, approaching that of a thick single-layer Au metal contact.

Original languageEnglish
Pages (from-to)4082-4084
Number of pages3
JournalJournal of Applied Physics
Volume71
Issue number8
DOIs
StatePublished - 1992

Fingerprint

Dive into the research topics of 'Al/Au and Cu/Au bilayer-metal contacts to YBa2Cu 3O7-x thin films'. Together they form a unique fingerprint.

Cite this