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Active dv/dt control with turn-off gate resistance modulation for voltage balancing of series connected SiC MOSFETs

  • SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

Stacking devices in series allows to achieve higher blocking voltage in power applications. However, an unequal voltage sharing issue among devices is critical which may lead to failure of the devices. The unbalance can be caused by different device characteristics and mismatch of gate signals due to different parasitic components of circuits. In this paper, a dv/dt control method with the active gate driver (AGD) is proposed for voltage balancing of stacked SiC MOSFETs. The dv/dt is actively controlled by modulating the turn-off gate resistance (Roff) during turn-off transient. The proposed method is experimentally validated by achieving voltage balancing with six series connected SiC MOSFETs at 3 kV dc voltage.

Original languageEnglish
Title of host publication2021 IEEE Applied Power Electronics Conference and Exposition, APEC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1256-1261
Number of pages6
ISBN (Electronic)9781728189499
DOIs
StatePublished - Jun 14 2021
Event36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021 - Virtual, Online, United States
Duration: Jun 14 2021Jun 17 2021

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021
Country/TerritoryUnited States
CityVirtual, Online
Period06/14/2106/17/21

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