Acceptor state instabilities in ZnSe under hydrostatic pressure

D. J. Strachan; M. Ming Li; M. C. Tamargo; B. A. Weinstein

doi:10.1016/0022-0248(94)90828-1

Acceptor state instabilities in ZnSe under hydrostatic pressure

D. J. Strachan
, M. Ming Li
, M. C. Tamargo
, B. A. Weinstein

Physics

SUNY Buffalo
City University of New York

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Photoluminescence experiments on ZnSe doped with P and As have been conducted at high pressure and low temperature. We find evidence that deep states arising from these impurities become unstable between 15 and 25 kbar. Although our results are not yet definitive, some interesting implications for current models are discussed.

Original language	English
Pages (from-to)	318-323
Number of pages	6
Journal	Journal of Crystal Growth
Volume	138
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(94)90828-1
State	Published - Apr 2 1994

Access to Document

10.1016/0022-0248(94)90828-1

Cite this

@article{1f7bb0e4e9cc46248cb3dbe2622bdfb5,

title = "Acceptor state instabilities in ZnSe under hydrostatic pressure",

abstract = "Photoluminescence experiments on ZnSe doped with P and As have been conducted at high pressure and low temperature. We find evidence that deep states arising from these impurities become unstable between 15 and 25 kbar. Although our results are not yet definitive, some interesting implications for current models are discussed.",

author = "Strachan, \{D. J.\} and Li, \{M. Ming\} and Tamargo, \{M. C.\} and Weinstein, \{B. A.\}",

year = "1994",

month = apr,

day = "2",

doi = "10.1016/0022-0248(94)90828-1",

language = "English",

volume = "138",

pages = "318--323",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Acceptor state instabilities in ZnSe under hydrostatic pressure

AU - Strachan, D. J.

AU - Li, M. Ming

AU - Tamargo, M. C.

AU - Weinstein, B. A.

PY - 1994/4/2

Y1 - 1994/4/2

N2 - Photoluminescence experiments on ZnSe doped with P and As have been conducted at high pressure and low temperature. We find evidence that deep states arising from these impurities become unstable between 15 and 25 kbar. Although our results are not yet definitive, some interesting implications for current models are discussed.

AB - Photoluminescence experiments on ZnSe doped with P and As have been conducted at high pressure and low temperature. We find evidence that deep states arising from these impurities become unstable between 15 and 25 kbar. Although our results are not yet definitive, some interesting implications for current models are discussed.

UR - https://www.scopus.com/pages/publications/0028760612

U2 - 10.1016/0022-0248(94)90828-1

DO - 10.1016/0022-0248(94)90828-1

M3 - Article

AN - SCOPUS:0028760612

SN - 0022-0248

VL - 138

SP - 318

EP - 323

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Acceptor state instabilities in ZnSe under hydrostatic pressure

Abstract

Access to Document

Other files and links

Fingerprint

Cite this