A wideband 2-5 GHz noise canceling subthreshold low noise amplifier

A. R.Aravinth Kumar; Bibhu Datta Sahoo; Ashudeb Dutta

doi:10.1109/TCSII.2017.2719678

A wideband 2-5 GHz noise canceling subthreshold low noise amplifier

A. R.Aravinth Kumar
, Bibhu Datta Sahoo
, Ashudeb Dutta

Department of Electrical Engineering

Indian Institute of Technology Hyderabad

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

This brief presents an energy efficient wideband low noise amplifier (LNA) operating in subthreshold regime. Wideband matching and low noise figure in subthreshold domain is achieved by using a gate inductor-assisted impedance matching and a current reuse feed-forward noise cancelation technique, respectively. Fabricated in UMC 0.18-μm CMOS technology, the proposed LNA draws 1 mA from 1.8-V supply and achieves a voltage gain of 13 dB (taking into account a 8 dB loss in buffer), minimum noise figure (NF_min) of 6 dB, and 3 dB bandwidth from 2 to 5 GHz.

Original language	English
Pages (from-to)	834-838
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	65
Issue number	7
DOIs	https://doi.org/10.1109/TCSII.2017.2719678
State	Published - Jul 2018

Keywords

CMOS
current reuse
LNA
low power
noise-canceling
subthreshold

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10.1109/TCSII.2017.2719678

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abstract = "This brief presents an energy efficient wideband low noise amplifier (LNA) operating in subthreshold regime. Wideband matching and low noise figure in subthreshold domain is achieved by using a gate inductor-assisted impedance matching and a current reuse feed-forward noise cancelation technique, respectively. Fabricated in UMC 0.18-μm CMOS technology, the proposed LNA draws 1 mA from 1.8-V supply and achieves a voltage gain of 13 dB (taking into account a 8 dB loss in buffer), minimum noise figure (NFmin) of 6 dB, and 3 dB bandwidth from 2 to 5 GHz.",

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AB - This brief presents an energy efficient wideband low noise amplifier (LNA) operating in subthreshold regime. Wideband matching and low noise figure in subthreshold domain is achieved by using a gate inductor-assisted impedance matching and a current reuse feed-forward noise cancelation technique, respectively. Fabricated in UMC 0.18-μm CMOS technology, the proposed LNA draws 1 mA from 1.8-V supply and achieves a voltage gain of 13 dB (taking into account a 8 dB loss in buffer), minimum noise figure (NFmin) of 6 dB, and 3 dB bandwidth from 2 to 5 GHz.

KW - CMOS

KW - current reuse

KW - LNA

KW - low power

KW - noise-canceling

KW - subthreshold

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ER -

A wideband 2-5 GHz noise canceling subthreshold low noise amplifier

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Keywords

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