A unity quantum efficiency and nanosecond response time photodetector using porous silicon film

J. P. Zheng; K. L. Jiao; W. A. Anderson; H. S. Kwok

doi:10.1117/12.175266

A unity quantum efficiency and nanosecond response time photodetector using porous silicon film

J. P. Zheng
, K. L. Jiao
, W. A. Anderson
, H. S. Kwok

Department of Electrical Engineering

SUNY Buffalo
Hong Kong University of Science and Technology

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A highly sensitive photodiode was fabricated with a metal-porous silicon-silicon-metal structure. The porous silicon film was found to be an excellent light trap and antireflection coating for the photodiode. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of630 to 900 nm. The detector response time is about 2 ns for a 9 volts reverse bias. It was also demonstrated that a relative sensitivity ofhigher than 90% could be obtained with incident angles of4O°, 80° and 58° for s-, p-A nd randomly-polarized light. The uniformity and stability of the photodiode were also studied. Porous silicon films can also be used as solar cells to improve the acceptance angle of the sunlight. Possible mechanisms to this photodiode and roles ofthe porous silicon film are discussed.

Original language	English
Pages (from-to)	262-270
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2149
DOIs	https://doi.org/10.1117/12.175266
State	Published - May 2 1994
Event	Technologies for Optical Fiber Communications 1994 - Los Angeles, United States Duration: Jan 23 1994 → Jan 29 1994

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title = "A unity quantum efficiency and nanosecond response time photodetector using porous silicon film",

abstract = "A highly sensitive photodiode was fabricated with a metal-porous silicon-silicon-metal structure. The porous silicon film was found to be an excellent light trap and antireflection coating for the photodiode. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of630 to 900 nm. The detector response time is about 2 ns for a 9 volts reverse bias. It was also demonstrated that a relative sensitivity ofhigher than 90\% could be obtained with incident angles of4O°, 80° and 58° for s-, p-A nd randomly-polarized light. The uniformity and stability of the photodiode were also studied. Porous silicon films can also be used as solar cells to improve the acceptance angle of the sunlight. Possible mechanisms to this photodiode and roles ofthe porous silicon film are discussed.",

author = "Zheng, \{J. P.\} and Jiao, \{K. L.\} and Anderson, \{W. A.\} and Kwok, \{H. S.\}",

note = "Publisher Copyright: {\textcopyright} 1994 SPIE.; Technologies for Optical Fiber Communications 1994 ; Conference date: 23-01-1994 Through 29-01-1994",

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T1 - A unity quantum efficiency and nanosecond response time photodetector using porous silicon film

AU - Zheng, J. P.

AU - Jiao, K. L.

AU - Anderson, W. A.

AU - Kwok, H. S.

PY - 1994/5/2

Y1 - 1994/5/2

N2 - A highly sensitive photodiode was fabricated with a metal-porous silicon-silicon-metal structure. The porous silicon film was found to be an excellent light trap and antireflection coating for the photodiode. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of630 to 900 nm. The detector response time is about 2 ns for a 9 volts reverse bias. It was also demonstrated that a relative sensitivity ofhigher than 90% could be obtained with incident angles of4O°, 80° and 58° for s-, p-A nd randomly-polarized light. The uniformity and stability of the photodiode were also studied. Porous silicon films can also be used as solar cells to improve the acceptance angle of the sunlight. Possible mechanisms to this photodiode and roles ofthe porous silicon film are discussed.

AB - A highly sensitive photodiode was fabricated with a metal-porous silicon-silicon-metal structure. The porous silicon film was found to be an excellent light trap and antireflection coating for the photodiode. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of630 to 900 nm. The detector response time is about 2 ns for a 9 volts reverse bias. It was also demonstrated that a relative sensitivity ofhigher than 90% could be obtained with incident angles of4O°, 80° and 58° for s-, p-A nd randomly-polarized light. The uniformity and stability of the photodiode were also studied. Porous silicon films can also be used as solar cells to improve the acceptance angle of the sunlight. Possible mechanisms to this photodiode and roles ofthe porous silicon film are discussed.

UR - https://www.scopus.com/pages/publications/67349144912

U2 - 10.1117/12.175266

DO - 10.1117/12.175266

M3 - Conference article

AN - SCOPUS:67349144912

SN - 0277-786X

VL - 2149

SP - 262

EP - 270

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Technologies for Optical Fiber Communications 1994

Y2 - 23 January 1994 through 29 January 1994

ER -

A unity quantum efficiency and nanosecond response time photodetector using porous silicon film

Abstract

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