A thermodynamic model for electrical current induced damage

Electromigration-induced damage, which is in principal an irreversible mass diffusion under high current density, has been a concern for VLSI design for a long time. Miniaturization of electronic device sizes down to nano-scale will make electromigration a concern for all conducting components. This paper uses thermodynamics, statistical mechanics and mass transport (diffusion) principals to propose a model for electromigration process and a damage evolution model to quantify the degradation in microelectronics (and micro electromechanical system) solder joints subjected to high current densities. Entropy production in the system is used as a damage metric. The irreversible thermodynamic damage model utilized in this work has previously been successfully applied to thermo-mechanical fatigue of microelectronic solder joints. In this paper we extend this model to electromigration-induced degradation. Electromigration process is modeled by the atomic vacancy flux (mass diffusion) process. The proposed unified model is compared with several existing analytical and empirical models. A comparison of the damage evolution model proposed in here agrees well with empirical models proposed in the literature.