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A Stable Ytterbium-Insulator-Semiconductor Solar Cell Based on an Interface Degradation Model

  • G. Rajeswaran
  • , V. J. Rao
  • , M. A. Jackson
  • , M. Thayer
  • , W. A. Anderson
  • , B. Bhasker Rao
  • SUNY Buffalo

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A comprehensive analysis of shelf life degradation in metal-insulator-semiconductor (MIS) solar cells has been performed. The instabilities associated with Cr-MIS solar cells result from a decrease in the insulator thickness. On modeling Schottky-barrier formation against oxide thickness variations, one finds that there is a range of oxide thicknesses which permit photocurrent collection and also give rise to stable MIS structures. This is specially true for low work function (ϕM) metals. Ytterbium (ϕM = 2.6) was a good candidate because of its excellent thin-film optical properties and its compatibility to MIS processing. Yb-MIS solar cells have proved to be very stable and obey the stability trends predicted by our model. In addition, Yb-MIS solar cells result in competitive photovoltaic conversion efficiencies (> 11.5 percent at AMI illumination).

Original languageEnglish
Pages (from-to)1840-1842
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume30
Issue number12
DOIs
StatePublished - Dec 1983

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