Abstract
A comprehensive analysis of shelf life degradation in metal-insulator-semiconductor (MIS) solar cells has been performed. The instabilities associated with Cr-MIS solar cells result from a decrease in the insulator thickness. On modeling Schottky-barrier formation against oxide thickness variations, one finds that there is a range of oxide thicknesses which permit photocurrent collection and also give rise to stable MIS structures. This is specially true for low work function (ϕM) metals. Ytterbium (ϕM = 2.6) was a good candidate because of its excellent thin-film optical properties and its compatibility to MIS processing. Yb-MIS solar cells have proved to be very stable and obey the stability trends predicted by our model. In addition, Yb-MIS solar cells result in competitive photovoltaic conversion efficiencies (> 11.5 percent at AMI illumination).
| Original language | English |
|---|---|
| Pages (from-to) | 1840-1842 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 30 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 1983 |
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