a-Si/c-Si solar cells: Effect of preparation and processing techniques on the photovoltaic properties

B. Jagannathan; W. A. Anderson

doi:10.1557/proc-426-77

a-Si/c-Si solar cells: Effect of preparation and processing techniques on the photovoltaic properties

B. Jagannathan
, W. A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The photovoltaic (PV) properties of undoped amorphous silicon (a-Si)/p-type crystalline silicon (c-Si) solar cells were found to improve by a hydrofluoric acid treatment of c-Si just prior to glow discharge deposition of a-Si. The short circuit current density (J_sc) improved from 2.7 to 23.5 mA/cm² for an 0.1 μm thick a-Si layer. This also resulted in an improved spectral response of the solar cell in the violet region of the spectrum. The enhanced properties have been attributed to the improved carrier transport across the interface, as seen in the current-voltage-temperature relationships, and also PC-1D simulation of the devices. Solar cells of a similar type were also fabricated by dc magnetron sputtering of the a-Si layer. HF passivated cells (area approximately 0.24 cm²) yielded about 9.5% efficiency with J_sc of 30 mA/cm² and a FF of 0.6, without use of an A/R coating. The variation of the PV properties of these cells was investigated as a function of a-Si thickness and c-Si doping.

Original language	English
Pages (from-to)	77-82
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	426
DOIs	https://doi.org/10.1557/proc-426-77
State	Published - 1996
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

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@article{899440efca8a4e86bd30461ae484bc35,

title = "a-Si/c-Si solar cells: Effect of preparation and processing techniques on the photovoltaic properties",

abstract = "The photovoltaic (PV) properties of undoped amorphous silicon (a-Si)/p-type crystalline silicon (c-Si) solar cells were found to improve by a hydrofluoric acid treatment of c-Si just prior to glow discharge deposition of a-Si. The short circuit current density (Jsc) improved from 2.7 to 23.5 mA/cm2 for an 0.1 μm thick a-Si layer. This also resulted in an improved spectral response of the solar cell in the violet region of the spectrum. The enhanced properties have been attributed to the improved carrier transport across the interface, as seen in the current-voltage-temperature relationships, and also PC-1D simulation of the devices. Solar cells of a similar type were also fabricated by dc magnetron sputtering of the a-Si layer. HF passivated cells (area approximately 0.24 cm2) yielded about 9.5\% efficiency with Jsc of 30 mA/cm2 and a FF of 0.6, without use of an A/R coating. The variation of the PV properties of these cells was investigated as a function of a-Si thickness and c-Si doping.",

author = "B. Jagannathan and Anderson, \{W. A.\}",

year = "1996",

doi = "10.1557/proc-426-77",

language = "English",

volume = "426",

pages = "77--82",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - JOUR

T1 - a-Si/c-Si solar cells

T2 - Proceedings of the 1996 MRS Spring Symposium

AU - Jagannathan, B.

AU - Anderson, W. A.

PY - 1996

Y1 - 1996

N2 - The photovoltaic (PV) properties of undoped amorphous silicon (a-Si)/p-type crystalline silicon (c-Si) solar cells were found to improve by a hydrofluoric acid treatment of c-Si just prior to glow discharge deposition of a-Si. The short circuit current density (Jsc) improved from 2.7 to 23.5 mA/cm2 for an 0.1 μm thick a-Si layer. This also resulted in an improved spectral response of the solar cell in the violet region of the spectrum. The enhanced properties have been attributed to the improved carrier transport across the interface, as seen in the current-voltage-temperature relationships, and also PC-1D simulation of the devices. Solar cells of a similar type were also fabricated by dc magnetron sputtering of the a-Si layer. HF passivated cells (area approximately 0.24 cm2) yielded about 9.5% efficiency with Jsc of 30 mA/cm2 and a FF of 0.6, without use of an A/R coating. The variation of the PV properties of these cells was investigated as a function of a-Si thickness and c-Si doping.

AB - The photovoltaic (PV) properties of undoped amorphous silicon (a-Si)/p-type crystalline silicon (c-Si) solar cells were found to improve by a hydrofluoric acid treatment of c-Si just prior to glow discharge deposition of a-Si. The short circuit current density (Jsc) improved from 2.7 to 23.5 mA/cm2 for an 0.1 μm thick a-Si layer. This also resulted in an improved spectral response of the solar cell in the violet region of the spectrum. The enhanced properties have been attributed to the improved carrier transport across the interface, as seen in the current-voltage-temperature relationships, and also PC-1D simulation of the devices. Solar cells of a similar type were also fabricated by dc magnetron sputtering of the a-Si layer. HF passivated cells (area approximately 0.24 cm2) yielded about 9.5% efficiency with Jsc of 30 mA/cm2 and a FF of 0.6, without use of an A/R coating. The variation of the PV properties of these cells was investigated as a function of a-Si thickness and c-Si doping.

UR - https://www.scopus.com/pages/publications/0030381087

U2 - 10.1557/proc-426-77

DO - 10.1557/proc-426-77

M3 - Conference article

AN - SCOPUS:0030381087

SN - 0272-9172

VL - 426

SP - 77

EP - 82

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 8 April 1996 through 12 April 1996

ER -

a-Si/c-Si solar cells: Effect of preparation and processing techniques on the photovoltaic properties

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