Abstract
A study was performed on a Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor. It was reported that spin injection from a Fe Schottky contact produced a spin polarization of 32% in an AlGaAs/GaAs quantum well. The atomic structure of the spin injecting interface was examined with transmission electron microscopy (TEM).
| Original language | English |
|---|---|
| Pages (from-to) | CD05 |
| Journal | Digests of the Intermag Conference |
| State | Published - 2003 |
| Event | Intermag 2003: International Magnetics Conference - Boston, MA, United States Duration: Mar 28 2003 → Apr 3 2003 |
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