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A schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor

  • A. T. Hanbicki
  • , R. M. Stroud
  • , R. Magno
  • , G. Kioseoglou
  • , C. H. Li
  • , B. T. Jonker
  • , G. Itskos
  • , R. Mallory
  • , M. Yasar
  • , A. Petrou
  • Naval Research Laboratory
  • SUNY Buffalo

Research output: Contribution to journalConference articlepeer-review

Abstract

A study was performed on a Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor. It was reported that spin injection from a Fe Schottky contact produced a spin polarization of 32% in an AlGaAs/GaAs quantum well. The atomic structure of the spin injecting interface was examined with transmission electron microscopy (TEM).

Original languageEnglish
Pages (from-to)CD05
JournalDigests of the Intermag Conference
StatePublished - 2003
EventIntermag 2003: International Magnetics Conference - Boston, MA, United States
Duration: Mar 28 2003Apr 3 2003

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