A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor

A. T. Hanbicki; R. M. Stroud; R. Magno; G. Kioseoglou; C. H. Li; B. T. Jonker; G. Itskos; R. Mallory; M. Yasar; A. Petrou

doi:10.1109/INTMAG.2003.1230334

A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor

A. T. Hanbicki
, R. M. Stroud
, R. Magno
, G. Kioseoglou
, C. H. Li
, B. T. Jonker
, G. Itskos
, R. Mallory
, M. Yasar
, A. Petrou

Physics

Naval Research Laboratory
SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we report here that spin injection from an Fe Schottky contact produces a spin polarization of 32% in an AlGaAs/GaAs quantum well, demonstrate via the Rowell criteria that tunneling is the dominate transport process, and examine the atomic structure of the spin injecting interface with TEM.

Original language	English
Title of host publication	Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780376471, 9780780376472
DOIs	https://doi.org/10.1109/INTMAG.2003.1230334
State	Published - 2003
Event	2003 IEEE International Magnetics Conference, Intermag 2003 - Boston, United States Duration: Mar 30 2003 → Apr 3 2003

Publication series

Name	Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference

Conference

Conference	2003 IEEE International Magnetics Conference, Intermag 2003
Country/Territory	United States
City	Boston
Period	03/30/03 → 04/3/03

Keywords

Contacts
Iron
Light emitting diodes
Magnetic semiconductors
Magnetoelectronics
Optical polarization
Schottky barriers
Spin polarized transport
Temperature
Tunneling

Access to Document

10.1109/INTMAG.2003.1230334

Cite this

Hanbicki, A. T., Stroud, R. M., Magno, R., Kioseoglou, G., Li, C. H., Jonker, B. T., Itskos, G., Mallory, R., Yasar, M., & Petrou, A. (2003). A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor. In Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference Article 1230334 (Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2003.1230334

Hanbicki, A. T. ; Stroud, R. M. ; Magno, R. et al. / A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor. Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc., 2003. (Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference).

@inproceedings{344042ff954d4eee80513bd6512131e8,

title = "A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor",

abstract = "In this paper, we report here that spin injection from an Fe Schottky contact produces a spin polarization of 32\% in an AlGaAs/GaAs quantum well, demonstrate via the Rowell criteria that tunneling is the dominate transport process, and examine the atomic structure of the spin injecting interface with TEM.",

keywords = "Contacts, Iron, Light emitting diodes, Magnetic semiconductors, Magnetoelectronics, Optical polarization, Schottky barriers, Spin polarized transport, Temperature, Tunneling",

author = "Hanbicki, \{A. T.\} and Stroud, \{R. M.\} and R. Magno and G. Kioseoglou and Li, \{C. H.\} and Jonker, \{B. T.\} and G. Itskos and R. Mallory and M. Yasar and A. Petrou",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Magnetics Conference, Intermag 2003 ; Conference date: 30-03-2003 Through 03-04-2003",

year = "2003",

doi = "10.1109/INTMAG.2003.1230334",

language = "English",

series = "Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference",

address = "United States",

}

Hanbicki, AT, Stroud, RM, Magno, R, Kioseoglou, G, Li, CH, Jonker, BT, Itskos, G, Mallory, R, Yasar, M & Petrou, A 2003, A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor. in Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference., 1230334, Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference, Institute of Electrical and Electronics Engineers Inc., 2003 IEEE International Magnetics Conference, Intermag 2003, Boston, United States, 03/30/03. https://doi.org/10.1109/INTMAG.2003.1230334

A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor. / Hanbicki, A. T.; Stroud, R. M.; Magno, R. et al.
Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc., 2003. 1230334 (Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor

AU - Hanbicki, A. T.

AU - Stroud, R. M.

AU - Magno, R.

AU - Kioseoglou, G.

AU - Li, C. H.

AU - Jonker, B. T.

AU - Itskos, G.

AU - Mallory, R.

AU - Yasar, M.

AU - Petrou, A.

PY - 2003

Y1 - 2003

N2 - In this paper, we report here that spin injection from an Fe Schottky contact produces a spin polarization of 32% in an AlGaAs/GaAs quantum well, demonstrate via the Rowell criteria that tunneling is the dominate transport process, and examine the atomic structure of the spin injecting interface with TEM.

AB - In this paper, we report here that spin injection from an Fe Schottky contact produces a spin polarization of 32% in an AlGaAs/GaAs quantum well, demonstrate via the Rowell criteria that tunneling is the dominate transport process, and examine the atomic structure of the spin injecting interface with TEM.

KW - Contacts

KW - Iron

KW - Light emitting diodes

KW - Magnetic semiconductors

KW - Magnetoelectronics

KW - Optical polarization

KW - Schottky barriers

KW - Spin polarized transport

KW - Temperature

KW - Tunneling

UR - https://www.scopus.com/pages/publications/84949506373

U2 - 10.1109/INTMAG.2003.1230334

DO - 10.1109/INTMAG.2003.1230334

M3 - Conference contribution

AN - SCOPUS:84949506373

T3 - Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference

BT - Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 IEEE International Magnetics Conference, Intermag 2003

Y2 - 30 March 2003 through 3 April 2003

ER -

Hanbicki AT, Stroud RM, Magno R, Kioseoglou G, Li CH, Jonker BT et al. A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor. In Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc. 2003. 1230334. (Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference). doi: 10.1109/INTMAG.2003.1230334

A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor

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