Abstract
A new process has been introduced to improve both efficiency and reproducibility of Cr-MIS solar cells. Active area efficiencies of up to 13.2% have been measured for 2 cm2 cells. These improvements are due to increased silicon surface cleanliness, an optimized interfacial oxide thickness, and a one pump-down vacuum process. Spectral response data correspond to measured Jsc: values and predict a reduced diffusion length of 64 μm in Wacker poly-Si caused by grain boundary effects.
| Original language | English |
|---|---|
| Pages (from-to) | 128-130 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 1 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 1980 |
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