Abstract
A mesh patterned n-type single-crystalline silicon nanomembrane (SiNM) created from a silicon-on-insulator (SOI) wafer is complementally combined with a p-type pentacene layer to form a heterogeneous p-n junction on a flexible plastic substrate. Excellent rectifying characteristics are obtained from the heterogeneous p-n diode. The diode also exhibits photosensitivity at visible wavelengths with a photo-to-dark current ratio exceeding four orders, a responsivity of 0.7 A/W, and an external quantum efficiency of 21.9% at 633 nm. Over 60% average transmittance in the visible spectrum is measured from the heterogeneous multilayer junction on a plastic substrate. Outstanding mechanical bending characteristics are observed with up to 1.08% of strain applied to the diode. These results suggest that organic-inorganic heterogeneous integration may be a viable strategy to build flexible organic-inorganic heterojunction devices and thus enable a number of novel multifunctional applications.
| Original language | English |
|---|---|
| Pages (from-to) | 3398-3403 |
| Number of pages | 6 |
| Journal | Advanced Functional Materials |
| Volume | 23 |
| Issue number | 27 |
| DOIs | |
| State | Published - Jul 19 2013 |
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